C&H Technology UFB120FA40P - Manual (Page 5)

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4 Revision: 25-Apr-08
UFB120FA40P
Vishay High Power Products Insulated Ultrafast
Rectifier Module, 120 A
Fig. 5 - Maximum Allowable Case Temperature vs.
Avarage Forward Current (Per Diode)
Fig. 6 - Forward Power Loss (Per Diode)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1) Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
0 10
Allo
wab
le Case
T
e
mperature (°C)
I
F(AV)
- Average Forward Current (A)
120
140
160
See note (1)
100 DC
80
60
20 30
Square wave (D = 0.50)
80 % rated V
R
applied
50 70
20
40
40 60
0 20
A
v
era
g
e P
o
wer Loss (W)
I
F(AV)
- Average Forward Current (A)
0
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
10 40
20
40
70
60
RMS limit
60 70
50
30
10
30 50
100 1000
t rr
(n
s
)
dI
F
/dt (A/µs)
80
140
V
RR
= 200 V
I
F
= 50 A
110
160
50
T
J
= 125 °C
T
J
= 25 °C
130
60
70
90
100
120
150
100 1000
Q
rr
(nC)
dI
F
/dt (A/µs)
1050
3050
2550
V
RR
= 200 V
I
F
= 50 A
2050
50
550
1550
T
J
= 125 °C
T
J
= 25 °C