C&H Technology SD853C..S50K Series - Manual (Page 6)

www.vishay.com For technical questions, contact: [email protected] Document Number: 93182
6 Revision: 14-May-08
SD853C..S50K Series
Vishay High Power Products Fast Recovery Diodes
(Hockey PUK Version), 990 A
Fig. 12 - Recovery Time Characteristics
Fig. 13 - Recovery Charge Characteristics
Fig. 14 - Recovery Current Characteristics
Fig. 15 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 16 - Frequency Characteristics
Fig. 17 - Maximum Total Energy Loss
Per Pulse Characteristics
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
10.5
10 100 1000
Ra te Of Fall Of Forwa rd Current - d i/ d t (A/ µs)
M
a
x
im
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
T
im
e
- T
rr (
µ
s)
500 A
I = 1500 A
Sine Pulse
1000 A
FM
SD853C..S50K Series
T = 125 °C; V > 100V
J r
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
0 50 100 150 200 250 300
M
a
x
imu
m R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
h
a
rg
e
-
Q
rr
(
µ
C
)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
500 A
I = 1500 A
Sine Pulse
1000 A
FM
SD853C..S50K Series
T = 125 °C; V > 100V
J r
0
100
200
300
400
500
600
700
800
0 50 100 150 200 250 300
M
a
x
im
u
m
Re
v
e
rs
e
Re
c
o
v
e
ry
C
u
rr
e
n
t -
Ir
r (
A
)
500 A
Rate Of Fall Of Forward Current - di/d t (A/µs)
I = 1500 A
Sine Pulse
1000 A
FM
SD853C..S50K Series
T = 125 °C; V > 100V
J r
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pulse Basewidth (µs)
P
e
a
k F
o
rw
ar
d C
u
rr
en
t (
A
)
10 joules p er pulse
6
4
d v/ d t = 1000V/ µs
T = 125°C, V = 1500V J RRM
Sinusoid al Pulse
0.8
0.6
0.4
0.2
SD853C..S50K Series
tp
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Basewidth (µs)
50 Hz
200
10000
100
4000
dv/ dt = 1000V/ us
400 1000
2000
6000
P
e
a
k
F
o
rw
a
rd
Cu
rr
ent
(A
)
Sinusoidal Pulse
SD853C..S50K Series
T = 55°C, V = 1500V C RRM
600
1500
tp
3000
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pulse Basewidth (µs)
4
10 joules per pulse
6
Trapezoidal Pulse
P
e
a
k F
o
rw
a
rd
C
u
rre
n
t (
A
)
T = 125°C, V = 1500V J RRM
SD853C..S50K Series
d v/ d t = 1000V/ µs
d i/ d t = 300A/ µs
0.8
0.6
tp
8
0.4