Vsk.f200..p series, Vishay high power products, Power modules), 200 a – C&H Technology VSK.F200..P Series User Manual

Page 4

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Document Number: 94422

For technical questions, contact: [email protected]

www.vishay.com

Revision: 03-Jun-08

3

VSK.F200..P Series

Fast Thyristor/Diode and Thyristor/Thyristor

(MAGN-A-PAK

TM

Power Modules), 200 A

Vishay High Power Products

SWITCHING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

K

J

Maximum non-repetitive rate of rise

dI/dt

Gate drive 20 V, 20

Ω, t

r

≤ 1 ms, V

D

= 80 % V

DRM

,

T

J

= 25 °C

800

A/µs

Maximum recovery time

t

rr

I

TM

= 350 A, dI/dt = - 25 A/µs, V

R

= 50 V, T

J

= 25 °C

2

µs

Maximum turn-off time

t

q

I

TM

= 750 A; T

J

= T

J

maximum; dI/dt = - 25 A/µs;

V

R

= 50 V; dV/dt = 400 V/µs linear to 80 % V

DRM

20

25

BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum critical rate of rise of
off-state voltage

dV/dt T

J

= 125 °C, exponential to 67 % V

DRM

1000

V/µs

RMS insulation voltage

V

INS

50 Hz, circuit to base, T

J

= 25 °C, t = 1 s

3000

V

Maximum peak reverse and off-state
leakage current

I

RRM

,

I

DRM

T

J

= 125 °C, rated V

DRM

/V

RRM

applied

50

mA

TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum peak gate power

P

GM

f = 50 Hz, d% = 50

60

W

Maximum peak average gate power

P

G(AV)

T

J

= 125 °C, f = 50 Hz, d% = 50

10

Maximum peak positive gate current

I

GM

T

J

= 125 °C, t

p

≤ 5 ms

10

A

Maximum peak negative gate voltage

-V

GT

5

V

Maximum DC gate current required to trigger

I

GT

T

J

= 25 °C, V

ak

12 V, Ra = 6

200

mA

DC gate voltage required to trigger

V

GT

3

V

DC gate current not to trigger

I

GD

T

J

= 125 °C, rated V

DRM

applied

20

mA

DC gate voltage not to trigger

V

GD

0.25

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction operating
temperature range

T

J

- 40 to 125

°C

Storage temperature range

T

Stg

- 40 to 150

Maximum thermal resistance,
junction to case per junction

R

thJC

DC operation

0.125

K/W

Maximum thermal resistance,
case to heatsink per module

R

thC-hs

Mounting surface flat, smooth and greased

0.025

Mounting torque ± 10 %

MAP to heatsink

A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to
allow for the spread of the compound. Use of cable
lugs is not recommended, busbar should be used
and restrained during tightening. Threads must be
lubricated with a compound.

4 to 6

(35 to 53)

N · m

(lbf · in)

busbar to MAP

Approximate weight

500

g

17.8

oz.

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