C&H Technology VSKDS203-100 - Manual (Page 5)

VSKDS203/100
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Vishay Semiconductors
Revision: 04-Jan-12 4 Document Number: 93225
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Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
200 150 100 50 250 300 0
80
140
180
0
40
60
100
160
120
20
93225_05
Square wave (D = 0.50)
Rated V
R
applied
See note (1)
DC
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
80 120 100 140 60 40 20 160 0
93225_06
80
100
120
0
40
60
20
DC
D = 0.75
D = 0.20
D = 0.25
D = 0.33
D = 0.50
RMS limit
100
10 100
t
p
- Square Wave Pulse Duration (µs)
I FSM
- Non-Repetitive Sur
g
e Current (A)
93225_07
1000 10 000
100 000
10 000
1000
Current
monitor
High-speed
switch
D.U.T.
R
g
= 25 Ω
+
Freewheel
diode
V
d
= 25 V
L
IRFP460
40HFL40S02