C&H Technology CM600HU-12H - Manual (Page 3)

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CM600HU-12H
Single IGBTMOD™ U-Series Module
600 Amperes/600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings Symbol CM600HU-12H Units
Junction Temperature T
j
-40 to 150 ° C
Storage Temperature T
stg
-40 to 125 ° C
Collector-Emitter Voltage (G-E SHORT) V
CES
600 Volts
Gate-Emitter Voltage (C-E SHORT) V
GES
±
20 Volts
Collector Current (T
c
= 25
°
C) I
C
600 Amperes
Peak Collector Current (T j
≤
150
°
C) I CM 1200* Amperes
Emitter Current** (T
c
= 25 ° C) I
E
600 Amperes
Peak Emitter Current** I
EM
1200* Amperes
Maximum Collector Dissipation (T
c
= 25 ° C) P
c
1560 Watts
Mounting Torque, M8 Main Terminal – 95 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Mounting Torque, M4 Terminal – 15 in-lb
Weight – 450 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
iso
2500 Volts
* Pulse width and repetition rate should be such that the device junction temperature (T j ) does not exceed T j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I CES V CE = V CES , V GE = 0V – – 1 mA
Gate Leakage Voltage I GES V GE = V GES , V CE = 0V – – 0.5
µ
A
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 60mA, V
CE
= 10V 4.5 6 7.5 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 600A, V
GE
= 15V, T
j
= 25 ° C – 2.4 3.0 Volts
I
C
= 600A, V
GE
= 15V, T
j
= 125
°
C – 2.6 – Volts
Total Gate Charge Q
G
V
CC
= 300V, I
C
= 600A, V
GE
= 15V – 1200 – nC
Emitter-Collector Voltage* V EC I E = 600A, V GE = 0V – – 2.6 Volts
* Pulse width and repetition rate should be such that the device junction temperature (T j ) does not exceed T j(max) rating.
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
ies
– – 52.8 nf
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V – – 28.8 nf
Reverse Transfer Capacitance C res – – 7.8 nf
Resistive Turn-on Delay Time t
d(on)
V
CC
= 300V, I
C
= 600A, – – 300 ns
Load Rise Time t
r
V
GE1
= V
GE2
= 15V, – – 600 ns
Switch Turn-off Delay Time t
d(off)
R
G
= 1.0 ⍀ , Resistive – – 350 ns
Times Fall Time t
f
Load Switching Operation – – 350 ns
Diode Reverse Recovery Time t rr I E = 600A, di E /dt = -1200A/
µ
s – – 160 ns
Diode Reverse Recovery Charge Q
rr
I
E
= 600A, di
E
/dt = -1200A/ µ s – 1.44 – µ C
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
th(j-c)
Q Per IGBT Module – – 0.08 ° C/ W
Thermal Resistance, Junction to Case R
th(j-c)
D Per FWDi Module – – 0.12
°
C/W
Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – 0.02 –
°
C/W
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