C&H Technology HFA80FA120P - Manual (Page 5)

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4 Revision: 04-Aug-08
HFA80FA120P
Vishay High Power Products HEXFRED ®
Ultrafast Soft Recovery
Diode, 80 A
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1) Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
0
20
40
60
80
100
120
160
140
Allowable
C
ase Temperature (°
C
)
I
F(AV)
- Average Forward Current (A)
20 10 30 40 70 60 50 0
DC
Square wave
(D = 0.50)
See note (1)
0
20
40
60
80
200
100
120
140
160
180
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
20 10 30 40 50 60 0
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
20
40
60
80
140
120
100
t rr
(ns)
dI
F
/dt (A/µs)
1000 100
I
F
= 40 A, T
J
= 125 °C
I
F
= 20 A, T
J
= 125 °C
I
F
= 40 A, T
J
= 25 °C
I
F
= 20 A, T
J
= 25 °C
0
800
600
400
200
1800
1600
1400
1200
1000
1000 100
Q
rr
(nC)
dI
F
/dt (A/µs)
I
F
= 40 A, T
J
= 25 °C
I
F
= 20 A, T
J
= 25 °C
I
F
= 40 A, T
J
= 125 °C
I
F
= 20 A, T
J
= 125 °C