C&H Technology ST303SPbF Series - Manual (Page 8)

Document Number: 94375 For technical questions, contact: [email protected] www.vishay.com
Revision: 30-Apr-08 7
ST303SPbF Series
Inverter Grade Thyristors
(Stud Version), 300 A
Vishay High Power Products
Fig. 13 - Frequency Characteristics
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
Fig. 15 - Gate Characteristics
1E0
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
1000
1500
200
Pulse Basewidth (µs)
P
e
a
k
O
n
-s
ta
te C
u
rr
ent
(
A
)
2000
Snub ber circ uit
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
D DRM
ST303S Series
Tra pezoid al p ulse
T = 40°C
di/ d t = 100A/ µs
C
tp
500
1E1 1E2 1E3 1E4
50 Hz
400
100
1000
1500
200
Pulse Basewidth (µs)
ST303S Series
Tra pezoid al p ulse
T = 65°C
di/ d t = 100A/ µs
C
Snub b er c irc uit
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
D DRM
2000
tp
500
1E1
1E2
1E3
1E4
1E5
1E1 1E2 1E3 1E4
Pulse Basewidth (µs)
20 joules p er p ulse
2
1
P
e
a
k O
n
-s
ta
te
C
u
rr
e
n
t (
A
)
0.5
10
5
3
0.4
ST303S Series
Sinusoid al p ulse
tp
1E1 1E2 1E3 1E4
Pulse Basewidth (µs)
20 joules p er pulse
2
1
0.5
10
5
ST303S Series
Rectangula r p ulse
d i/ dt = 50A/ µs tp
3
0.4
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj
=
2
5
°
C
Tj
=
1
2
5
°
C
Tj
=
-4
0
°
C
(1) (2)
Instantaneous Gate Current (A)
In
st
a
n
ta
n
e
o
u
s G
a
te
V
o
lt
a
g
e
(
V
)
Rec tangular gate pulse
a) Recommended load line for
b) Recommended load line for
<=30% rated di/ dt : 10V, 10ohms
rated di/ dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
(3)
Device: ST303S Series
(4)
Frequency Limited by PG(AV)