C&H Technology VS-GA250SA60S - Manual (Page 4)

VS-GA250SA60S
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Vishay Semiconductors
Revision: 20-Jul-12 3 Document Number: 94704
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Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature
Fig. 2 - Typical Collector to Emitter Current Output Characteristics
Fig. 3 - Typical IGBT Transfer Characteristics
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 5 - Typical IGBT Threshold Voltage
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, V
GE
= 15 V
I
C
- Continuous Collector Current (A)
Allowable
Case
Temperature
(°C)
80
100
120
140
160
0
20
40
60
0 50 100 150 200 250 300 350 400 450 500
1
10
100
1000
0.5 0.0 1.0 1.5 2.0 2.5
V
CE
- Collector to Emitter Voltage (V)
I C
- Collector to Emitter Current (A)
T
J
= 150 °C
V
GE
= 15 V
T
J
= 25 °C
T
J
= 125 °C
1
10
100
1000
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
V
GE
- Gate to Emitter Voltage (V)
I C
- Collector to Emitter Current (A)
T
J
= 150 °C
T
J
= 25 °C
T
J
= 125 °C
V
CE
- Collector-to-Emitter Voltage (V)
I CE
S
-
Collector Curr
ent (mA)
0.01
0.1
1
10
0.0001
0.001
100 200 300 400 500 600
T
J
= 150 °C
T
J
= 25 °C
T
J
= 125 °C
V
G
Eth
-
Thr
eshol
d
V
o
ltage (V)
3.5
4
4.5
5
5.5
6
2
2.5
3
0.20 0.40 0.60 0.80 1.00
T
J
= 25 °C
T
J
= 125 °C
I
C
- Continuous Collector Current (mA)
T
J
- Junction Temperature (°C)
V
CE
-
Collector
-to-Emitter V
o
ltage (V)
0.5
1
1.5
2
2.5
0 20 40 60 80 100 120 140 160
Ic = 100 A
Ic = 200 A
Ic = 400 A