C&H Technology PM50B5L1C060 User Manual

Page 5

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PM50B5L1C060
Photo Voltaic IPM
H-Bridge + 1 Chopper
50 Amperes/600 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

4

03/11 Rev. 0

Electrical and Mechanical Characteristics,

T

j

= 25°C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Control Part

Circuit Current

I

D

V

D

= 15V, V

CIN

= 15V, V

N1

-V

NC

— 6.5 12 mA

V

D

= 15V, V

CIN

= 15V, V

*P1

-V

*PC

— 1.6 4 mA

Input ON Threshold Voltage

V

th(on)

Applied between U

P

-V

UPC

,

1.2 1.5 1.8 Volts

Input OFF Threshold Voltage

V

th(off)

V

P

-V

VPC

, U

N

- V

N

- W

N

-Br-V

NC

1.7 2.0 2.3 Volts

Short Circuit Trip Level

SC

-20°C ≤ T

j

≤ 125°C, V

D

= 15V

75

Amperes

Short Circuit Current Delay Time

t

off(SC)

V

D

= 15V

0.2

µs

Over Temperature Protection

OT

Trip Level

135

°C

(Detect Temperature of IGBT)

OT

(hys)

Hysteresis

— 20 — °C

Supply Circuit Under-voltage Protection

UV

t

Trip Level

11.5

12.0

12.5

Volts

(-20°C ≤ T

j

≤ 125°C)

UV

r

Reset

Level

— 12.5 — Volts

Fault Output Current*

2

I

FO(H)

V

D

= 15V, V

FO

= 15V

0.01

mA

I

FO(L)

V

D

= 15V, V

FO

= 15V

10

15

mA

Fault Output Pulse Width*

2

t

FO

V

D

= 15V

1.0

1.8

ms

Thermal Characteristics,

T

j

= 25°C unless otherwise specified

Characteristic

Symbol

Condition

Min.

Typ.

Max.

Units

Junction to Case Thermal Resistance

R

th(j-c)Q

Inverter IGBT (Per 1 Element)*

1

0.74 °C/Watt

R

th(j-c)D

Inverter FWDi (Per 1 Element)*

1

0.128 °C/Watt

R

th(j-c)Q

Converter IGBT (Per 1 Element)*

1

0.74 °C/Watt

R

th(j-c)D

Converter FWDi (Per 1 Element)*

1

0.128 °C/Watt

R

th(j-c)D

Converter Diode (Per 1 Element)*

1

0.128 °C/Watt

Contact Thermal Resistance

R

th(c-f)

Case to Fin (Per 1 Element)*

1

, — 0.060 —

°C/Watt

Thermal Grease Applied

Recommended Conditions for Use

Characteristic

Symbol

Condition

Value Units

Inverter Supply Voltage

V

CC

Applied across P-N Terminals

≤450

Volts

Control Supply Voltage*

3

V

D

Applied between V

UP1

-V

UPC

,

15.0 ± 1.5 Volts

V

VP1

-V

VPC

, V

N1

-V

NC

Input ON Voltage

V

CIN(on)

Applied between U

P

-V

UPC

,

≤0.8

Volts

Input OFF Voltage

V

CIN(off)

V

P

-V

VPC

, U

N

- V

N

- W

N

-Br-V

NC

≥9.0 Volts

PWM Input Frequency

f

PWM

Using Application Circuit Input Signal of IPM,

≤20

kHz

3-Phase Sinusoidal PWM VVVF Inverter

Arm Shoot-through Blocking Time

t

DEAD

For IPMs Each Input Signals

≥2.0

µs

*1 When using this value, R

th(s-a)

should be measured just under the chips.

*2 Fault output is given only when the internal SC, OT and UV protections schemes of either upper or lower devide operate to protect it.
Fault output of SC protection given pulse. Fault output of OT, UV protection given pulse while over trip level.
*3 With ripple satisfying the following conditions: dv/dt swing ≤5V/µs ; variation ≤2V peak-to-peak.

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