C&H Technology RM900DB-90S - Manual (Page 5)

MITSUBISHI ELECTRIC CORPORATION
HIGH VOLTAGE DIODE MODULE HVM-2018 (HV-SETSU)
PAGE
4 / 11
11. Test Circuit & Definition of Switching Characteristics
A
K
DUT: diode
Rg
L
LOAD
C
S
= 200 uF
L
S2
= 150 nH
L
S1
C = 2 mF V
CC
Fig. 1 – Switching test circuit
Diode part: reverse recovery
0
0
if dt
0
t6
Qrr = –
∫
I
F
di/dt
Irr
dt
di
10%V
R
10%I
F
t5
50%Irr
90%Irr
trr
t6
V
R
t6
t5
if•vr dt Erec = –
∫
0
Fig. 2 – Definitions of reverse recovery charge & energy