Vishay semiconductors – C&H Technology VS-UFB230FA60 User Manual
Page 5
VS-UFB230FA60
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Vishay Semiconductors
Revision: 03-Nov-11
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Document Number: 93641
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Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Fig. 9 - Typical I
rr
Diode vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd +Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
93641_05
0
25
50
75
100
125
150
175
0
40
80
120
160
200
240
280
DC
Square wave (D = 0.50)
80 % Rated V
R
applied
Average Forward Current - I
F(AV)
(A)
Average Power Loss (W)
93641_06
0
100
200
300
400
500
0
40
80
120
160
200
240
280
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS Limit
t
rr
(ns)
dI
F
/dt (A/µs)
100
1000
93641_07
50
100
150
200
250
V
R
= 200 V
I
F
= 50 A, 25 °C
I
F
= 50 A, 125 °C
Q
rr
(nC)
dI
F
/dt (A/µs)
0
0
0
1
0
0
1
0
500
1000
1500
2000
2500
3000
3500
I
F
= 50 A, T
J
= 125 °C
I
F
= 50 A, T
J
= 25 °C
V
R
= 200 V
93641_08
I
rr
(A)
dI
F
/dt (A/μs)
93641_09
100
1000
0
10
20
30
40
V
R
= 200 V
I
F
= 50 A, 125 °C
I
F
= 50 A, 25 °C