Datasheet, Igbt sip module (fast igbt) cpv362m4upbf, Vishay high power products – C&H Technology CPV362M4UPbF User Manual

Page 2: Rohs

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Document Number: 94483

For technical questions, contact: [email protected]

www.vishay.com

Revision: 01-Sep-08

1

IGBT SIP Module

(Fast IGBT)

CPV362M4UPbF

Vishay High Power Products

FEATURES

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all “tail” losses

• HEXFRED

®

soft ultrafast diodes

• Optimized for high speed over 5 kHz

See fig. 1 for current vs. frequency curve

• Totally lead (Pb)-free

• Designed and qualified for industrial level

DESCRIPTION

The IGBT technology is the key to Vishay´s HPP advanced
line of IMS (Insulated Metal Substrate) power modules.
These modules are more efficient than comparable bipolar
transistor modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.

Notes

(1)

Repetitive rating; V

GE

= 20 V, pulse width limited by maximum junction temperature (see fig. 20)

(2)

V

CC

= 80 % (V

GES

), V

GE

= 20 V, L = 10 µH, R

G

= 50

Ω (see fig.19)

PRODUCT SUMMARY

OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE

I

RMS

per phase (3.1 kW total)

with T

C

= 90 °C

4.6 A

RMS

T

J

125 °C

Supply voltage

360 Vdc

Power factor

0.8

Modulation depth (see fig. 1)

115 %

V

CE(on)

(typical)

at I

C

= 3.9 A, 25 °C

1.7 V

IMS-2

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL

TEST

CONDITIONS

MAX.

UNITS

Collector to emitter voltage

V

CES

600

V

Continuous collector current, each IGBT

I

C

T

C

= 25 °C

7.2

A

T

C

= 100 °C

3.9

Pulsed collector current

I

CM

(1)

22

Clamped inductive load current

I

LM

(2)

Diode continuous forward current

I

F

T

C

= 100 °C

3.4

Diode maximum forward current

I

FM

22

Gate to emitter voltage

V

GE

± 20

V

Isolation voltage

V

ISOL

1 minute, any terminal to case

2500

V

RMS

Maximum power dissipation, each IGBT

P

D

T

C

= 25 °C

23

W

T

C

= 100 °C

9.1

Operating junction and storage temperature range

T

J

, T

Stg

- 40 to + 150

°C

Soldering temperature

10 s, (0.063" (1.6 mm) from case)

300

Mounting torque

6-32 or M3 screw

5 to 7

(0.55 to 0.8)

lbf · in

(N · m)

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