Vishay high power products, Thermal and mechanical specifications – C&H Technology GB75DA120UP User Manual
Page 4
Document Number: 93011
For technical questions, contact:
www.vishay.com
Revision: 23-Apr-09
3
GB75DA120UP
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 75 A
Vishay High Power Products
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
Fig. 2 - IGBT Reverse Bias SOA
T
J
= 150 °C, V
GE
= 15 V
Fig. 3 - Typical IGBT Collector Current Characteristics
Fig. 4 - Maximum DC Forward Current vs.
Case Temperature
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN. TYP. MAX.
UNITS
Maximum junction and storage temperature range
T
J
, T
Stg
- 40
-
150
°C
Junction to case
IGBT
R
thJC
-
-
0.19
°C/W
Diode
-
-
0.52
Case to sink per module
R
thCS
-
0.05
-
Mounting torque, 6-32 or M3 screw
-
-
1.3
Nm
Weight
-
30
-
g
Allowable Case Temperature (°C)
I
C
- Continuous Collector Current (A)
0
20
40
60
80
100
120
140
0
160
100
120
140
20
40
60
80
I
C
(A)
V
CE
(V)
10
100
1000
10 000
1
1000
10
100
I
C
(A)
V
CE
(V)
0
2
4
6
1
3
5
0
200
50
100
150
T
J
= 125 °C
T
J
= 25 °C
Allowable Case Temperature (°C)
I
F
- Continuous Forward Current (A)
0
10
20
30
40
50
60
70
0
160
100
120
140
20
40
60
80