C&H Technology CM600HA-5F - Manual (Page 3)

370
CM600HA-5F
Trench Gate Design Single IGBTMOD™
600 Amperes/250 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol CM600HA-5F Units
Junction Temperature T
j
-40 to 150 ° C
Storage Temperature T
stg
-40 to 125 ° C
Collector-Emitter Voltage (G-E Short) V
CES
250 Volts
Gate-Emitter Voltage (C-E Short) V
GES
±
20 Volts
Collector Current I
C
600 Amperes
Peak Collector Current I CM 1200 Amperes
Diode Forward Current I
F
600 Amperes
Diode Forward Surge Current I
FM
1200 Amperes
Power Dissipation P
d
960 Watts
Maximum Mounting Torque, M6 Terminal Screws — 26 in-lb
Maximum Mounting Torque, M6 Mounting Screws — 26 in-lb
Maximum Mounting Torque, M4 (G, E) Terminal Screws — 13 in-lb
Module Weight (Typical) — 400 Grams
Isolation Voltage, AC 1 minute, 60Hz V
RMS
2500 Volts
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V — — 1.0 mA
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V — — 0.5
µ
A
Gate-Emitter Threshold Voltage V GE(th) I C = 60mA, V CE = 10V 3.0 4.0 5.0 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 600A, V
GE
= 10V, — 1.2 1.7 Volts
I
C
= 600A, V
GE
= 10V, T
j
= 150 ° C — 1.1 — Volts
Total Gate Charge Q
G
V
CC
= 50V, I
C
= 600A, V
GS
= 10V — 2200 — nC
Diode Forward Voltage V
FM
I
E
= 600A, V
GS
= 0V — — 2.0 Volts
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
IES
— — 165 nF
Output Capacitance C
OES
V
GE
= 0V, V
CE
= 10V — — 7.5 nF
Reverse Transfer Capacitance C RES — — 5.6 nF
Resistive Turn-on Delay Time t
d(on)
— — 1000 ns
Load Rise Time t
r
V
CC
= 50V, I
C
= 600A, — — 4000 ns
Switching Turn-off Delay Time t
d(off)
V
GE1
= V
GE2
= 10V, R
G
= 4.2
Ω
, — — 1000 ns
Times Fall Time t
F
Resistive Load — — 500 ns
Diode Reverse Recovery Time t
rr
I
E
= 600A, di
E
/dt = -1200A/ms — — 300 ns
Diode Reverse Recovery Charge Q rr I E = 600A, di E /dt = -1200A/ms — 9.5 —
µ
C
Thermal and Mechanical Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
th(j-c)
Per IGBT — — 0.13 ° C/W
Thermal Resistance, Junction to Case R
th(j-c)
Free Wheel Diode — — 0.19 ° C/W
Contact Thermal Resistance R
th(c-f)
Per Module, Thermal Grease Applied — — 0.040 ° C/W