Vishay semiconductors – C&H Technology VS-GB100TP120U User Manual
Page 2
VS-GB100TP120U
www.vishay.com
Vishay Semiconductors
Revision: 17-May-13
1
Document Number: 94823
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Molding Type Module IGBT,
2 in 1 Package, 1200 V, 100 A
FEATURES
• 10 μs short circuit capability
• V
CE(on)
with positive temperature coefficient
• Rugged with ultrafast performance
• Square RBSOA
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Switching mode power supplies
• Inductive heating
• Electronic welders
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
Note
(1)
Repetitive rating: Pulse width limited by maximum junction temperature.
PRODUCT SUMMARY
V
CES
1200 V
I
C
at T
C
= 80 °C
100 A
V
CE(on)
(typical)
at I
C
= 100 A, 25 °C
3.45 V
Package
INT-A-PAK
Circuit
Half Bridge
INT-A-PAK
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
1200
V
Gate to emitter voltage
V
GES
± 20
Collector current
I
C
T
C
= 25 °C
150
A
T
C
= 80 °C
100
Pulsed collector current
I
CM
(1)
t
p
= 1 ms
200
Diode continuous forward current
I
F
100
Diode maximum forward current
I
FM
200
Maximum power dissipation
P
D
T
J
= 150 °C
735
W
Short circuit withstand time
t
SC
T
J
= 125 °C
10
μs
RMS isolation voltage
V
ISOL
f = 50 Hz, t = 1 min
2500
V
I
2
t-value, diode
I
2
t
V
R
= 0 V, t = 10 ms, T
J
= 125 °C
1700
A
2
s