C&H Technology VS19DDR12L - Manual (Page 2)

Document Number: 93886 For technical questions, contact: [email protected] www.vishay.com
Revision: 22-Apr-08 1
High Power Rectifier Diodes
VS19DDR12L
Vishay High Power Products
FEATURES
• Standard recovery diode
• Anode metal - nickel plate molybdenum disc
ORDERING INFORMATION TABLE
PRODUCT SUMMARY
Junction size Ø 19 mm
V
RRM
class 1200 V
Passivation process Silicone rubber
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage V
FM
T
J
= 25 °C, I
F
= 500 A 1.32
V
Maximum repetitive reverse voltage V
RRM
T
J
= 150 °C, I
RRM
= 15 mA 1200
MECHANICAL DATA
Nominal back metal composition Al-Ni-Au
Nominal front metal composition Nickel plate molybdenum disc
Chip dimensions Ø 19 mm (see dimensions - link at the end of datasheet)
Recommended storage environment Storage in original container, in desiccated nitrogen, with no contamination
1 - Vishay HPP device
2 - Chip dimension in millimeters
4 - Type of device: D = Standard recovery diode
5 - Passivation: R = Rubber for all junctions
6 - Voltage code x 100 = V
RRM
(12 = 1200 V)
7 - Metallization: L = Nickel plate molybdenum disc (anode)
Al-Ni-Au (cathode)
3 - Device identifier between chip with same diameter
Device code
5 1 3 2 4 6 7
VS 19 D D R 12 L
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95155