C&H Technology CPV363M4UPbF - Manual (Page 5)

www.vishay.com For technical questions, contact: [email protected] Document Number: 94486
4 Revision: 01-Sep-08
CPV363M4UPbF
Vishay High Power Products IGBT SIP Module
(Ultrafast IGBT)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of Fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
0.1 1 10 100
0
2
4
6
8
10
12
f, Frequency (KHz)
L
O
AD CURRENT (
A
)
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage
0.00
0.58
1.17
1.75
2.33
2.92
3.50
Total Output Power (kW)
0.1
1
10
100
0 1 1 1 . 0
CE
C I , C
o
llector-to-Em
itter C
u
rrent (A)
V , Collector-to-Emitter Voltage (V)
T = 150°C
T = 25°C
J
J
V = 15V
20µs PULSE WIDTH GE
0.1
1
10
100
5 6 7 8 9 10
C I , C
o
llector-to-Em
itter C
u
rrent (A)
GE
T = 25°C
T = 150°C
J
J
V , Gate-to-Emitter Voltage (V)
V = 10V
5µs PULSE WIDTH CC
0
2
4
6
8
10
12
14
25 50 75 100 125 150
Maxi
mum DC Col
lect
o
r Current (A)
T , Case Temperature (°C) C
V = 15V
GE
-60 -40 -20 0 20 40 60 80 100 120 140 160
1.0
2.0
3.0
T , Junction Temperature ( C)
V
, C
o
lle
c
to
r-to
-E
m
itte
r V
o
lta
g
e
(V
)
J
°
CE
V = 15V
80 us PULSE WIDTH GE
I = A 3.4 C
I = A 6.8
C
I = A 13.6
C