C&H Technology RM400DG-66S - Manual (Page 3)

MITSUBISHI ELECTRIC CORPORATION
HIGH VOLTAGE DIODE MODULE HVM-2012 (HV-SETSU)
PAGE
2 / 11
6. Maximum Ratings
Item Symbol Conditions Ratings Unit
Repetitive peak reverse voltage V
RRM
T
j
= 25 °C 3300 V
Non-repetitive peak reverse
voltage
V
RSM
T
j
= 25 °C 3300 V
Reverse DC voltage V
R(DC)
T
j
= 25 °C 2200 V
DC forward current I
F
T
c
= 25 °C 400 A
Surge forward current I
FSM
T
j
= 25 °C start, t
w
= 8.3 ms
Half sign wave
3200 A
Surge current load integral I 2 t
T
j
= 25 °C start, t
w
= 8.3 ms
Half sign wave
42.7 kA 2 s
Isolation voltage V
iso
Charged part to the baseplate
RMS sinusoidal, 60Hz 1min.
10200 V
Junction temperature T
j
— −40 ~ +150 °C
Storage temperature T
stg
— −40 ~ +125 °C
Operating temperature T
op
— −40 ~ +125 °C
Maximum reverse recovery
instantaneous power
—
V
R
≤ 2200 V
di/dt ≤ 1800 A/µs, T
j
= 125 °C
[See Fig.1, Fig.2, 12-5]
800 kW
7. Electrical
Characteristics
Limits
Item Symbol Conditions
Min. Typ. Max.
Unit
T
j
= 25 °C — — 2
Repetitive reverse current I
RRM
V
RM
= V
RRM
T
j
= 125 °C — 1 10
mA
T
j
= 25 °C — 2.80 —
Forward voltage V
FM
(Note 1)
I
F
= 400 A
T
j
= 125 °C — 2.70 —
V
Reverse recovery time t
rr
— 1.00 — µs
Reverse recovery current I
rr
— 530 — A
Reverse recovery charge Q
rr
— 270 — µC
Reverse recovery energy E
rec
V
R
= 1650 V, I
F
= 400 A
di/dt = −1350 A/µs
T
j
= 125 °C
[See Fig.1,Fig.2]
— 0.3 — J/P
Note 1: It doesn't include the voltage drop by Internal lead resistance.