C&H Technology VSKU-V56..PbF Series - Manual (Page 3)

www.vishay.com For technical questions, contact: [email protected] Document Number: 94515
2 Revision: 25-Apr-08
VSKU/V41, 56..PbF Series
Vishay High Power Products Thyristor/Thyristor, 45/60 A
(ADD-A-PAK TM Generation 5 Power Modules)
ELECTRICAL SPECIFICATIONS
Notes
(1) I 2 t for time t
x
= I 2 √t x √t
x
(2) Average power = V
T(TO)
x I
T(AV)
+ r
t
x (I
T(RMS)
) 2
(3) 16.7 % x
π x I
AV
< I <
π x I
AV
(4) I > π x I
AV
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
V
DRM
, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
I
RRM,
I
DRM
AT 125 °C
mA
VSKU/V41, 56
04 400 500 400
15
08 800 900 800
12 1200 1300 1200
16 1600 1700 1600
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS
VALUES
UNITS
VSKU/V41 VSKU/V56
Maximum average on-state current I
T(AV)
180° conduction, half sine wave, T
C
= 85 °C 45 60
A
Maximum RMS on-state current I
T(RMS)
DC 70 95
T
C
82 80 °C
Maximum peak, one-cycle
non-repetitive on-state current
I
TSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
850 1310
A
t = 8.3 ms 890 1370
t = 10 ms 100 % V
RRM
reapplied
715 1100
t = 8.3 ms 750 1150
t = 10 ms T
J
= 25 °C,
no voltage reapplied
940 1450
t = 8.3 ms 985 1520
Maximum I 2 t for fusing I 2 t
t = 10 ms No voltage
reapplied
Initial T
J
= T
J
maximum
3.61 8.56
kA 2 s
t = 8.3 ms 3.30 7.82
t = 10 ms 100 % V
RRM
reapplied
2.56 6.05
t = 8.3 ms 2.33 5.53
t = 10 ms T
J
= 25 °C,
no voltage reapplied
4.42 10.05
t = 8.3 ms 4.03 9.60
Maximum I 2 √t for fusing
I 2 √t (1) t = 0.1 to 10 ms, no voltage reapplied 36.1 85.6 kA 2 √s
Maximum value of threshold voltage V
T(TO)
(2)
Low level (3)
T
J
= T
J
maximum
0.88 0.85
V
High level (4) 0.91 0.88
Maximum value of on-state
slope resistance
r
t
(2)
Low level (3) 5.90 3.53
m
Ω
High level (4) 5.74 3.41
Maximum peak on-state voltage V
TM
I
TM
= π x
I
T(AV)
T
J
= 25 °C 1.81 1.54 V
I
FM
=
π x
I
F(AV)
Maximum non-repetitive rate of rise
of turned on current
dI/dt
T
J
= 25 °C, from 0.67 V
DRM
,
I
TM
=
π x I
T(AV)
, I
g
= 500 mA,
t
r
< 0.5 µs, t
p
> 6 µs
150 A/µs
Maximum holding current I
H
T
J
= 25 °C, anode supply = 6 V,
resistive load, gate open circuit
200
mA
Maximum latching current I
L
T
J
= 25 °C, anode supply = 6 V, resistive load 400