C&H Technology VS-GB100TH120N - Manual (Page 3)

VS-GB100TH120N
www.vishay.com
Vishay Semiconductors
Revision: 26-Mar-13 2 Document Number: 94752
For technical questions within your region: [email protected] , [email protected] , [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IGBT ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
T
J
= 25 °C 1200 - -
V Collector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 100 A, T
J
= 25 °C - 1.9 2.35
V
GE
= 15 V, I
C
= 100 A, T
J
= 125 °C - 2.1 -
Gate to emitter threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 4.0 mA, T
J
= 25 °C 5.0 6.2 7.0
Collector cut-off current I
CES
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C - - 5.0 mA
Gate to emitter leakage current I
GES
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C - - 400 nA
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 100 A, R
g
= 5.6
,
V
GE
= ± 15 V, T
J
= 25 °C
- 279 -
ns
Rise time t
r
- 61 -
Turn-off delay time t
d(off)
- 308 -
Fall time t
f
- 205 -
Turn-on switching loss E
on
- 5.56 -
mJ
Turn-off switching loss E
off
- 6.95 -
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 100 A, R
g
= 5.6 ,
V
GE
= ± 15 V, T
J
= 125 °C
- 287 -
ns
Rise time t
r
- 63 -
Turn-off delay time t
d(off)
- 328 -
Fall time t
f
- 360 -
Turn-on switching loss E
on
- 7.85 -
mJ
Turn-off switching loss E
off
- 10.55 -
Input capacitance C
ies
V
GE
= 0 V, V
CE
= 25 V, f = 1.0 MHz
- 8.58 -
nF Output capacitance C
oes
- 0.60 -
Reverse transfer capacitance C
res
- 0.40 -
SC data I
SC
t
sc
 10 μs, V
GE
= 15 V, T
J
= 125 °C,
V
CC
= 900 V, V
CEM
 1200 V
- 600 - A
Internal gate resistance R
GINT
- 5.0 - 
Stray inductance L
CE
- - 20 nH
Module lead resistance, terminal to chip R
CC’+EE’
T
C
= 25 °C - 0.35 - m 
DIODE ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Diode forward voltage V
F
I
F
= 100 A
T
J
= 25 °C - 1.82 2.22
V
T
J
= 125 °C - 1.95 -
Diode reverse recovery charge Q
rr
I
F
= 100 A, V
R
= 600 V,
dI/dt = - 2000 A/μs,
V
GE
= - 15 V
T
J
= 25 °C - 5.5 -
μC
T
J
= 125 °C - 11.9 -
Diode peak reverse recovery current I
rr
T
J
= 25 °C - 85 -
A
T
J
= 125 °C - 103 -
Diode reverse recovery energy E
rec
T
J
= 25 °C - 2.07 -
mJ
T
J
= 125 °C - 5.56 -