Insulated ultrafast rectifier module, 250 a, Vishay semiconductors – C&H Technology VS-UFB250FA60 User Manual

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VS-UFB250FA60

www.vishay.com

Vishay Semiconductors

Revision: 27-Jun-11

1

Document Number: 93626

For technical questions, contact:

[email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Insulated Ultrafast Rectifier Module, 250 A

FEATURES

• Two fully independent diodes

• Fully insulated package

• Ultrafast, soft reverse recovery, with high

operation junction temperature (T

J

max. = 175 °C)

• Very low forward voltage drop

• Optimized for power conversion: welding and industrial

SMPS applications

• Easy to use and parallel

• Industry standard outline

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION

The VS-UFB250FA60 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.

These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.

Note

(1)

Maximum continuous forward current must be limited to 100 A to do not exceed the maximum temperature of power terminals.

PRODUCT SUMMARY

V

R

600 V

I

F(AV)

(1)

per module at T

C

= 113 °C

250 A

t

rr

166 ns

Type

Modules - Diode FRED Pt

®

SOT-227

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

UNITS

Cathode to anode voltage

V

R

600

V

Continuous forward current per diode

I

F

(1)

T

C

= 90 °C

168

A

Single pulse forward current per diode

I

FSM

T

C

= 25 °C

1300

Maximum power dissipation per module

P

D

T

C

= 90 °C

395

W

RMS isolation voltage

V

ISOL

Any terminal to case, t = 1 minute

2500

V

Operating junction and storage temperatures

T

J

, T

Stg

- 55 to 175

°C

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