C&H Technology GA100TS60SF - Manual (Page 2)

GA100TS60SF
Bulletin I27201 rev. A 01/06
"HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT
Absolute Maximum Ratings
V
CES
Collector-to-Emitter Voltage 600 V
I
C
Continuos Collector Current @ T
C
= 25°C 220 A
@ T
C
= 130°C 100
I
CM
Pulsed Collector Current 440
I
LM
Peak Switching Current 440
V
GE
Gate-to-Emitter Voltage ± 20 V
V
ISOL
RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500
P
D
Maximum Power Dissipation @ T
C
= 25°C 780 W
@ T
C
= 100°C 312
Parameters Max Units
• Standard Speed PT Igbt Technology
• Fred PT Antiparallel diodes with Fast
recovery
• Very Low Conduction Losses
• Al
2
O
3
DBC
• UL Pending
Features
INT-A-PAK
• Optimized for high current inverter
stages (AC TIG welding machines)
• Direct mounting to heatsink
• Hard switching operation frequency
up to 1 KHz
• Very low junction-to-case thermal
resistance
• Low EMI
Benefits
V
CES
= 600V
I
C
= 220A DC
V
CE(on)
typ. = 1.39V
@ I
C
= 200A T
J
= 25°C
Document Number: 93619 www.vishay.com
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