C&H Technology UFB200CB40P - Manual (Page 2)

Document Number: 94276 For technical questions, contact: [email protected] www.vishay.com
Revision: 16-Jul-09 1
Not Insulated SOT-227 Power Module
Ultrafast Rectifier, 200 A
UFB200CB40P
Vishay High Power Products
Note
(1) All 4 anode terminals connected
FEATURES
• Not insulated package
• Ultrafast reverse recovery
• Ultrasoft reverse recovery current shape
• Optimized for power conversion: welding and industrial
SMPS applications
• Plug-in compatible with other SOT-227 packages
• Easy to assemble
• Direct mounting to heatsink
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The UFB200CB40P not insulated modules integrate two
state of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The planar structure of
the diodes, and the platinum doping life time control, provide
a ultrasoft recovery current shape, together with the
best overall performance, ruggedness and reliability
characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not to
be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
dc-to-dc converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
Notes
(1) Both anode terminals connected;
Maximum I
RMS
current per leg 200 A to do not exceed the maximum temperature of terminals, see fig. 6
(2) 10 ms sine or 6 ms rectangular pulse
PRODUCT SUMMARY
V
R
400 V
I
F(AV)
at T
C
= 146 °C per module (1) 200 A
t
rr
89 ns
SOT-227
1 4 2 3
Anode Anode
Base common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
R
400 V
Continuous forward current per diode I
F
(1) T
C
= 140 °C 142
A
Single pulse forward current per diode I
FSM
(2) T
C
= 25 °C 1300
Maximum power dissipation per module P
D
T
C
= 140 °C 368 W
Operating junction and storage temperatures T
J
, T
Stg
- 55 to 175 °C