C&H Technology CM600HG-130H User Manual

Page 4

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CM600HG-130H
Single IGBTMOD™ HVIGBT Module
600 Amperes/6500 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272

3

5/08

Static Electrical Characteristics, T

j

= 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Collector-Cutoff Current

I

CES

V

CE

= V

CES

, V

GE

= 0V, T

j

= 25°C

10.0

mA

V

CE

= V

CES

, V

GE

= 0V, T

j

= 125°C

30

90.0

mA

Gate-Emitter Threshold Voltage

V

GE(th)

I

C

= 60mA, V

CE

= 10V

5.0

6.0

7.0

Volts

Gate Leakage Current

I

GES

V

GE

= V

GES

, V

CE

= 0V

0.5

μ

A

Collector-Emitter Saturation Voltage

V

CE(sat)

I

C

= 600A, V

GE

= 15V, T

j

= 25°C

5.1

Volts

I

C

= 600A, V

GE

= 15V, T

j

= 125°C

5.0

Volts

Input Capacitance

C

ies

V

CE

= 10V, V

GE

= 0V,

124

nF

Output Capacitance

C

oes

f = 100kHz,

7.6

nF

Reverse Transfer Capacitance

C

res

T

j

= 25°C

2.2

nF

Total Gate Charge

Q

G

V

CC

= 3600V, I

C

= 600A, V

GE

= 15V

9.9

μ

C

Emitter-Collector Voltage**

V

EC

I

E

= 600A, V

GE

= 0V, T

j

= 25°C

4.0

Volts

I

E

= 600A, V

GE

= 0V, T

j

= 125°C

3.6

Volts

Turn-On Delay Time

t

d(on)

V

CC

= 3600V, I

C

= 600A,

1.2

μ

s

Turn-On Rise Time

t

r

V

GE1

= -V

GE2

= 15V, R

G(on)

= 10

Ω,

0.35

μ

s

Turn-On Switching Energy

E

on

T

j

= 125°C, t

off

= 60

μ

s

4.5

J/P

Turn-Off Delay Time

t

d(off)

V

CC

= 3600V, I

C

= 600A,

6.6

μ

s

Turn-Off Fall Time 1

t

f1

V

GE1

= -V

GE2

= 15V,

0.5

μ

s

Turn-Off Fall Time 2

t

f2

R

G(off)

= 24

Ω,

3.3

μ

s

Turn-Off Switching Energy

E

off

T

j

= 125°C, t

off

= 60

μ

s

3.5

J/P

Reverse Recovery Time 1**

t

rr1

V

CC

= 3600V, I

E

= 600A,

1.0

μ

s

Reverse Recovery Time 2**

t

rr2

di

e

/dt = -2000A/

μ

s,

2.4

μ

s

Reverse Recovery Charge**

Q

rr

T

j

= 125°C,

1100

μ

C

Reverse Recovery Energy**

E

rec

t

off

= 60

μ

s

2.0

J/P

* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Thermal Characteristics, T

j

= 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Thermal Resistance, Junction to Case

R

th(j-c)

Q

Per IGBT

14.0

K/kW

Thermal Resistance, Junction to Case

R

th(j-c)

D

Per FWDi

22.0

K/kW

Contact Thermal Resistance, Case to Fin

R

th(c-f)

Per Module, Thermal Grease Applied

6.0

K/kW

Mechanical Characteristics, T

j

= 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Comparative Tracking Index

CTI

600

Clearance

26.0

mm

Creepage Distance

56.0

mm

Internal Inductance

L

C-E(int)

18

nH

Internal Lead Resistance

R

C-E(int)

0.18

m

Ω

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