Vishay semiconductors, Forward conduction, Blocking – C&H Technology VS-T20HF220 User Manual

Page 3: Thermal and mechanical specifications, R conduction per junction

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VS-T20HF220

www.vishay.com

Vishay Semiconductors

Revision: 24-Apr-12

2

Document Number: 94709

For technical questions within your region:

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Note

(1)

A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the
compound

Note

• Table shows the increment of thermal resistance R

thJC

when devices operate at different conduction angles than DC

FORWARD CONDUCTION

PARAMETER SYMBOL

TEST

CONDITIONS T20HF

UNITS

Maximum average forward current
at case temperature

I

F(AV)

180° conduction, half sine wave

20

A

85

°C

Maximum RMS forward current

I

F(RMS)

31

A

Maximum peak, one-cycle
forward, non-repetitive
surge current

I

FSM

t = 10 ms

No voltage
reapplied

Sinusoidal
half wave,
initial T

J

=

T

J

maximum

450

A

t = 8.3 ms

470

t = 10 ms

100 % V

RRM

reapplied

380

t = 8.3 ms

400

Maximum I

2

t for fusing

I

2

t

t = 10 ms

No voltage
reapplied

1015

A

2

s

t = 8.3 ms

920

t = 10 ms

100 % V

RRM

reapplied

715

t = 8.3 ms

650

Maximum I

2

t for fusing

I

2

t

t = 0.1 ms to 10 ms, no voltage reapplied

10 125

A

2

s

Low level value of
threshold voltage

V

F(TO)1

(16.7 % x

 x I

F(AV)

< I <

 x I

F(AV)

),

T

J

maximum

0.77

V

High level value of
threshold voltage

V

F(TO)2

(I >

 x I

F(AV)

), T

J

maximum

0.89

Low level value of
forward slope resistance

r

f1

(16.7 % x

 x I

F(AV)

< I <

 x I

F(AV)

),

T

J

maximum

8.5

m

High level value of
forward slope resistance

r

f2

(I >

 x I

F(AV)

), T

J

maximum

6.7

Maximum forward voltage drop

V

FM

I

FM

= 60 A, T

J

= 25 °C,

t

p

= 400 μs square pulse

Average power = V

F(TO)

x I

F(AV)

+ r

f

x (I

F(RMS)

)

2

1.50

V

BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

T20HF

UNITS

Maximum peak reverse
leakage current

I

RRM

T

J

= 150 °C

18

mA

RMS isolation voltage

V

ISOL

50 Hz, circuit to base, all terminals shorted
T

J

= 25 °C, t = 1 s

3500

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL

TEST

CONDITIONS

VALUES

UNITS

T20HF

Maximum junction operating
and storage temperature range

T

J

, T

Stg

- 40 to 150

°C

Maximum thermal resistance,
junction to case per junction

R

thJC

DC operation

2.53

K/W

Maximum thermal resistance,
case to heatsink

R

thCS

Mounting surface smooth, flat
and greased

0.2

Mounting torque,
± 10 %

to heatsink

Non-lubricated
threads

M3.5 mounting screws

(1)

1.3 ± 10 %

Nm

terminals

M5 screw terminals

3 ± 10 %

Approximate weight

See dimensions - link at the end of datasheet

54

g

Case style

T-module (D-55)

R CONDUCTION PER JUNCTION

DEVICES

SINUSOIDAL CONDUCTION AT T

J

MAXIMUM

RECTANGULAR CONDUCTION AT T

J

MAXIMUM

UNITS

180°

120°

90°

60°

30°

180°

120°

90°

60°

30°

T20HF...

0.29

0.34

0.43

0.64

1.10

0.20

0.35

0.47

0.67

1.11

K/W

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