C&H Technology VS-GA200TH60S - Manual (Page 5)

VS-GA200TH60S
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Vishay Semiconductors
Revision: 17-Sep-12 4 Document Number: 94762
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Fig. 5 - Gate Charge Characteristics
Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 7 - Switching Times vs. I
C
Fig. 8 - Typical Switching Times vs. Gate Resistance R
g
Fig. 9 - Diode Typical Forward Characteristics
0 100 200 300 500 400 700 600
V
G
E
(V)
Q
g
(nC)
V
CC
= 300 V
T
J
= 25 °C
I
C
= 100 A
0
2
4
6
8
10
12
14
16
18
20
C (nF)
V
CE
(V)
10 1
10 2
10 0
10 -1
0 10 15 5 20 25 30 35
C
res
C
ies
C
oes
0 100 300 400 200
10
2
10 3
10
1
t (ns)
I
C
(A)
t
d(off)
t
d(on)
t
f
t
r
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 4.7 Ω
V
CC
= 300 V
0 40 20 60
10 2
10 3
10 4
10 1
t (ns)
R
g
( Ω)
V
GE
= ± 15 V
T
J
= 125 °C
I
C
= 200 A
V
CC
= 300 V
t
d(off)
t
d(on)
t
f
t
r
0
100
50
150
200
250
300
350
400
0 0.5 1 1.5 2
I F
(A)
V
F
(V)
25 °C
125 °C