C&H Technology RM1200DG-66S - Manual (Page 3)

MITSUBISHI ELECTRIC CORPORATION
HIGH VOLTAGE DIODE MODULE HVM-2010-A (HV-SETSU)
PAGE
2 / 11
6. Maximum Ratings
Item Symbol Conditions Ratings Unit
6.1 Repetitive peak reverse voltage V
RRM
T
j
= 25 °C 3300 V
6.2 Non-repetitive peak reverse
voltage
V
RSM
T
j
= 25 °C 3300 V
6.3 Reverse DC voltage V
R(DC)
T
j
= 25 °C 2200 V
6.4 DC forward current I
F
T
c
= 25 °C 1200 A
6.5 Surge forward current I
FSM
T
j
= 25 °C start, t
w
= 8.3 ms
Half sign wave
9600 A
6.6 Surge current load integral I 2 t
T
j
= 25 °C start, t
w
= 8.3 ms
Half sign wave
384 kA 2 s
6.7 Isolation voltage V
iso
Charged part to the baseplate
RMS sinusoidal, 60Hz 1min.
10200 V
6.8 Junction temperature T
j
— −40 ~ +150 °C
6.9 Storage temperature T
stg
— −40 ~ +125 °C
6.10 Operating temperature T
op
— −40 ~ +125 °C
6.11 Maximum reverse recovery
instantaneous power
—
V
R
≤ 2200 V
di/dt ≤ 5400 A/µs, T
j
= 125 °C
[See Fig.1, Fig.2, 12-5]
2400 kW
7. Electrical
Characteristics
Limits
Item Symbol Conditions
Min. Typ. Max.
Unit
T
j
= 25 °C — — 5
7.1 Repetitive reverse current I
RRM
V
RM
= V
RRM
T
j
= 125 °C — 3 30
mA
T
j
= 25 °C — 2.80 —
7.2 Forward voltage V
FM
(Note 1)
I
F
= 1200 A
T
j
= 125 °C — 2.70 —
V
7.3 Reverse recovery time t
rr
— 1.00 — µs
7.4 Reverse recovery current I
rr
— 1600 — A
7.5 Reverse recovery charge Q
rr
— 800 — µC
7.6 Reverse recovery energy E
rec
V
R
= 1650 V, I
F
= 1200 A
di/dt = −4000 A/µs
T
j
= 125 °C
[See Fig.1,Fig.2]
— 0.90 — J/P
Note 1: It doesn't include the voltage drop by Internal lead resistance.