C&H Technology VS-UFB80FA60 - Manual (Page 4)

VS-UFB80FA60
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Vishay Semiconductors
Revision: 03-Nov-11 3 Document Number: 93642
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Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Diode)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Diode)
I F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
1
10
100
1000
0 0.5 1 1.5 2 2.5 3 3.5
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
I R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
0.001
0.01
0.1
1
10
100
1000
0 100 200 300 400 500 600
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
10
100
1000
10 000
10 100 1000
Z
thJC
- Thermal Impedance (°C/W)
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
t
1
- Rectangular Pulse Duration (s)
DC
Single pulse
(thermal resistance)
P
DM
t
2
t
1
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C