C&H Technology VS-GB400TH120U - Manual (Page 5)

VS-GB400TH120U
www.vishay.com
Vishay Semiconductors
Revision: 06-Mar-13 4 Document Number: 94789
For technical questions within your region: [email protected] , [email protected] , [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Diode Typical Forward Characteristics Fig. 8 - Diode Switching Loss vs. I
C
0
100
200
300
400
500
600
700
800
900
0 300 600 900 1200 1500
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 2.2 Ω
I
C
, Module
V
CE
(V)
I C
(A)
t (s)
Z
thJC
(K/W)
IGBT
10 -3 10 -2 10 -1 10 0 10 1
10 -1
10 -2
10 -3
0
100
200
300
400
500
600
700
800
0 0.5 1 1.5 2 3 2.5
V
F
(V)
I F
(A)
25 °C
125 °C
E (mJ)
0
5
10
15
20
25
30
35
0 200 400 600 800
I
F
(A)
E
rec
V
GE
= - 15 V
T
J
= 125 °C
V
CC
= 600 V
R
g
= 2.2 Ω