C&H Technology CM600DU-24NFH User Manual
Page 3
CM600DU-24NFH
Dual IGBTMOD™ NFH-Series Module
600 Amperes/1200 Volts
2
07/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Absolute Maximum Ratings,
Tj = 25 °C unless otherwise specified
Ratings
Symbol CM600DU-24NF Units
Junction Temperature
Tj
–40 to 150
°C
Storage Temperature
Tstg
–40 to 125
°C
Collector-Emitter Voltage (G-E Short)
VCES 1200 Volts
Gate-Emitter Voltage (C-E Short)
VGES ±20 Volts
Collector Current (TC = 25°C)
IC
600* Amperes
Peak Collector Current
ICM
1200* Amperes
Emitter Current** (TC = 25°C)
IE
600* Amperes
Peak Emitter Current**
IEM
1200* Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)
PC 1550 Watts
Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C)
PC 3700 Watts
Mounting Torque, M6 Main Terminal
—
40
in-lb
Mounting Torque, M6 Mounting
—
40
in-lb
Weight
—
580 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
VISO 2500 Volts
Static Electrical Characteristics,
Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
ICES VCE = VCES, VGE = 0V
—
—
1.0
mA
Gate Leakage Current
IGES VGE = VGES, VCE = 0V
—
—
2.0
µA
Gate-Emitter Threshold Voltage
VGE(th) IC = 60mA, VCE = 10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat) IC = 600A, VGE = 15V, Tj = 25°C
—
5.0
6.5
Volts
IC = 600A, VGE = 15V, Tj = 125°C
—
5.0
—
Volts
Total Gate Charge
QG VCC = 600V, IC = 600A, VGE = 15V
—
2700
—
nC
Emitter-Collector Voltage**
VEC IE = 600A, VGE = 0V
—
—
3.5
Volts
Dynamic Electrical Characteristics,
Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
Cies
—
—
95
nF
Output Capacitance
Coes VCE = 10V, VGE = 0V
—
—
8.0
nF
Reverse Transfer Capacitance
Cres
—
—
1.8
nF
Inductive
Turn-on Delay Time
td(on)
— — 400 ns
Load
Rise Time
tr VCC = 600V, IC = 600A,
—
—
120
ns
Switch
Turn-off Delay Time
td(off) VGE1 = VGE2 = 15V, RG = 0.52Ω,
—
—
700
ns
Time
Fall Time
tf
Inductive Load
—
—
150
ns
Diode Reverse Recovery Time**
trr
Switching Operation,
—
—
250
ns
Diode Reverse Recovery Charge**
Qrr IE = 600A
—
28
—
µC
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).