Vishay semiconductors – C&H Technology VS-GB600AH120N User Manual
Page 2
VS-GB600AH120N
www.vishay.com
Vishay Semiconductors
Revision: 27-May-13
1
Document Number: 94791
For technical questions within your region:
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Molding Type Module IGBT,
1-in-1 Package, 1200 V and 600 A
FEATURES
• High short circuit capability, self limiting to 6 x I
C
• 10 μs short circuit capability
• V
CE(on)
with positive temperature coefficient
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• AC inverter drives
• Switching mode power supplies
• Electronic welder at f
sw
up to 20 kHz
DESCRIPTION
Vishay’s IGBT power module provides ultralow conduction
loss as well as short circuit ruggedness. It is designed for
applications such as inverters and UPS.
Note
(1)
Repetitive rating: Pulse width limited by maximum junction temperature.
PRODUCT SUMMARY
V
CES
1200 V
I
C
at T
C
= 80 °C
600 A
V
CE(on)
(typical)
at I
C
= 600 A, 25 °C
1.9 V
Package
Double INT-A-PAK
Circuit
Single Switch Diode
Double INT-A-PAK
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
1200
V
Gate to emitter voltage
V
GES
± 20
Collector current at T
J
= 150 °C
I
C
T
C
= 25 °C, T
J
= 150 °C
910
A
T
C
= 80 °C, T
J
= 150 °C
600
Pulsed collector current
I
CM
(1)
T
C
= 80 °C
1200
Diode continuous forward current
I
F
600
Diode maximum forward current
I
FM
1200
Maximum power dissipation
P
D
T
J
= 150 °C
3125
W
Short circuit withstand time
t
SC
T
J
= 125 °C
10
μs
RMS isolation voltage
V
ISOL
f = 50 Hz, t = 1 min
2500
V
I
2
t-value, diode
I
2
t
V
R
= 0 V, t = 10 ms, T
J
= 125 °C
74 000
A
2
s