Vishay high power products, Medium power silicon rectifier diodes, 12 a, Forward conduction – C&H Technology 1N36..A Series User Manual
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Document Number: 93493
2
Revision: 24-Jun-08
1N1...A, 1N36..A Series
Vishay High Power Products
Medium Power
Silicon Rectifier Diodes, 12 A
Notes
(1)
JEDEC registered values
(2)
I
2
t for time t
x
= I
2
√t x √t
x
(3)
Maximum peak reverse current (I
RM
) under same conditions
≈ 2 x rated I
R(AV)
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
at case temperature
I
F(AV)
180° sinusoidal conduction
12
(1)
A
150
(1)
°C
Maximum peak one cycle
non-repetitive surge current
I
FSM
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse
Following any rated load
condition and with rated
V
RRM
applied
230
A
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
240
(1)
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse
Following any rated load
condition and with V
RRM
applied following surge = 0
275
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
285
Maximum I
2
t for fusing
I
2
t
t = 10 ms
With rated V
RRM
applied
following surge,
initial T
J
= 200 °C
260
A
2
s
t = 8.3 ms
240
Maximum I
2
t for individual
device fusing
t = 10 ms
With V
RRM
= 0 following
surge, initial T
J
= 200 °C
370
t = 8.3 ms
340
Maximum I
2
√t for individual
device fusing
I
2
√t
(2)
t = 0.1 to 10 ms, V
RRM
= 0 following surge
3715
A
2
√s
Maximum forward voltage drop
V
FM
I
F(AV)
= 12 A (38 A peak), T
C
= 25 °C
1.35
(1)
V
Maximum average
reverse current
V
RRM
= 50
I
R(AV)
(3)
Maximum rated I
F(AV)
and T
C
3.0
(1)
mA
V
RRM
= 100
2.5
(1)
V
RRM
= 150
2.25
(1)
V
RRM
= 200
2.0
(1)
V
RRM
= 300
1.75
(1)
V
RRM
= 400
1.5
(1)
V
RRM
= 500
1.25
(1)
V
RRM
= 600
1.0
(1)
V
RRM
= 700
0.9
(1)
V
RRM
= 800
0.8
(1)
V
RRM
= 900
0.7
(1)
V
RRM
= 1000
0.6
(1)