C&H Technology CM50TU-24F User Manual
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CM50TU-24F
Trench Gate Design Six IGBTMOD™
50 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dynamic Electrical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
–
–
20
nf
Output Capacitance
C
oes
V
CE
= 10V, V
GE
= 0V
–
–
0.85
nf
Reverse Transfer Capacitance
C
res
–
–
0.5
nf
Inductive
Turn-on Delay Time
t
d(on)
V
CC
= 600V, I
C
= 50A,
–
–
100
ns
Load
Rise Time
t
r
V
GE1
= V
GE2
= 15V,
–
–
50
ns
Switch
Turn-off Delay Time
t
d(off)
R
G
= 6.3
⍀
,
–
–
300
ns
Times
Fall Time
t
f
Inductive Load
–
–
300
ns
Diode Reverse Recovery Time**
t
rr
Switching Operation
–
–
150
ns
Diode Reverse Recovery Charge**
Q
rr
I
E
= 50A,
–
2.1
–
µ
C
Thermal and Mechanical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Q
Per IGBT 1/6 Module, T
c
Reference
–
0.39
°
C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case
R
th(j-c)
D
Per FWDi 1/6 Module, T
c
Reference
–
–
0.70
°
C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case
R
th(j-c)
'Q
Per IGBT 1/6 Module,
–
0.26
°
C/W
T
c
Reference Point Under Chip
Contact Thermal Resistance
R
th(c-f)
Per Module, Thermal Grease Applied
–
0.018
–
°
C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).