Thermal and mechanical characteristics, t, 25°c unless otherwise specified – C&H Technology CM150DUS-12F User Manual

Page 4

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CM150DUS-12F
Trench Gate Design Dual IGBTMOD™
150 Amperes/600 Volts

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

Thermal and Mechanical Characteristics, T

j

= 25°C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Thermal Resistance, Junction to Case

R

th(j-c)

Q

Per IGBT 1/2 Module, T

c

Reference

0.24

°C/W

Point per Outline Drawing

Thermal Resistance, Junction to Case

R

th(j-c)

D

Per FWDi 1/2 Module, T

c

Reference

0.47

°C/W

Point per Outline Drawing

Thermal Resistance, Junction to Case

R

th(j-c')

Q

Per IGBT 1/2 Module,

0.19** °C/W

T

c

Reference Point Under Chip

Contact Thermal Resistance

R

th(c-f)

Per Module, Thermal Grease Applied

0.07

°C/W

External Gate Resistance

R

G

4.2

42

Ω

** If you use this value, Rth(f-a) should be measured just under the chips.

COLLECTOR-CURRENT, I

C

, (AMPERES)

SWITCHING LOSS,

E

SW

, (mJ/PULSE)

SWITCHING LOSS VS. COLLECTOR CURRENT

(TYPICAL)

10

1

10

2

10

3

10

0

10

-1

10

1

E

SW(on)

E

SW(off)

COLLECTOR-EMITTER VOLTAGE, V

CE

, (VOLTS)

COLLECTOR CURRENT,

I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

0

1

2

3

4

150

50

0

V

GE

= 20V

13

8

8.5

7.5

7

100

250

200

300

9

15

COLLECTOR-CURRENT, I

C

, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE,

V

CE(sat)

, (VOLTS

)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

3.0

0

50

100

150

200

250

2.5

2.0

1.5

1.0

0.5

0

300

V

GE

= 15V

T

j

= 25

°C

T

j

= 125

°C

COLLECTOR-EMITTER VOLTAGE, V

CE

, (VOLTS)

CAPACITANCE,

C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(TYPICAL)

10

-1

10

2

10

2

10

1

10

-1

10

0

V

GE

= 0V

f = 1MHz

C

oes

C

res

C

ies

10

0

10

1

0.5

0

1.5

1.0

2.0

2.5

3.0

10

0

10

1

10

2

EMITTER-COLLECTOR VOLTAGE, V

EC

, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

3

EMITTER CURRENT,

I

E

, (AMPERES)

T

j

= 25

°C

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE,

V

CE(sat

), (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

5

6

8

10

14

12

18

16

20

4

3

2

1

0

T

j

= 25

°C

I

C

= 60A

I

C

= 300A

I

C

= 150A

V

CC

= 300V

V

GE

=

±15V

R

G

= 4.2

T

j

= 125

°C

HALF-BRIDGE
SWITCHING

T

j

= 25

o

C

9.5

10

11

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