Absolute maximum ratings, t, 25°c unless otherwise specified, Inverter sector – C&H Technology CM100RX-12A User Manual

Page 3: Brake sector

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CM100RX-12A
Six IGBTMOD™ + Brake NX-Series Module
100 Amperes/600 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272

2

Rev. 3/09

Absolute Maximum Ratings,

T

j

= 25°C unless otherwise specified

Characteristics

Symbol CM100RX-12A Units

Power Device Junction Temperature

T

j

-40 to 150

°C

Storage Temperature

T

stg

-40 to 125

°C

Mounting Torque, M5 Mounting Screws

31

in-lb

Mounting Torque, M5 Main Terminal Screws

31

in-lb

Module Weight (Typical)

330

Grams

Baseplate Flatness, On Centerline X, Y (See Below)

±0 ~ +100

µm

Isolation Voltage, AC 1 minute, 60Hz Sinusoidal

V

ISO

2500 Volts

Inverter Sector

Collector-Emitter Voltage (G-E Short)

V

CES

600 Volts

Gate-Emitter Voltage (C-E Short)

V

GES

±20 Volts

Collector Current (T

C

= 75°C)

*1

I

C

100 Amperes

Peak Collector Current (Pulse)

*3

I

CM

200 Amperes

Emitter Current (T

C

= 25°C)

*1

I

E

*2

100 Amperes

Peak Emitter Current

*3

I

EM

*2

200 Amperes

Maximum Collector Dissipation (T

C

= 25°C)

*1*4

P

C

400 Watts

Brake Sector

Collector-Emitter Voltage (G-E Short)

V

CES

600 Volts

Gate-Emitter Voltage (C-E Short)

V

GES

±20 Volts

Collector Current (T

C

= 97°C)

*1

I

C

50 Amperes

Peak Collector Current (Pulse)

*3

I

CM

100 Amperes

Maximum Collector Dissipation (T

C

= 25°C)

*1*4

P

C

280 Watts

Repetitive Peak Reverse Voltage (Clamp Diode Part)

V

RRM

*2

600 Volts

Forward Current (T

C

= 25°C)

*1

I

F

*2

50 Amperes

Forward Current (Pulse)

*3

I

FM

*2

100 Amperes

*1 Case temperature (T

C

) and heatsink temperature (T

f

) are defined on the surface of the baseplate and heatsink at just under the chip.

*2 I

E

, I

EM

, V

EC

, t

rr

and Q

rr

represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

I

F

, I

FM

, I

RRM

, V

FM

and V

RRM

represent ratings and characteristics of the clamp diode.

*3 Pulse width and repetition rate should be such that device junction temperature (T

j

) does not exceed T

j(max)

rating.

*4 Junction temperature (T

j

) should not increase beyond T

j(max)

rating.

34

0

0

0

0

33 32 31 30 29 28 27 26 25 24 23 22

Dimensions in mm (Tolerance: ±1mm)

21 20 19 18 17 16 15 14 13

12

35

36

1

2

3

4

11

10

9
8
7

6
5

IGBT FWDi NTC Thermistor

Chip Location (Top View)

24.8

22.2

31

.7

41

.2

50.7

78.8

88.4

99.5

41.2

29.4

U

P

V

P

W

P

W

N

V

N

U

N

Br

22.2

31

.7

41

.2

50.7

79.4

88.4

96.8

21.3

32.2

36.8

U

P

V

P

W

P

W

N

Br

V

N

U

N

30.4

Th

CHIP LOCATION (TOP VIEW)

BASEPLATE FLATNESS
MEASUREMENT POINT

HEATSINK SIDE

– : CONCAVE

+ : CONVEX

– : CONCAVE

X

Y

+ : CONVEX

HEATSINK SIDE

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