C&H Technology CM421655 User Manual
Page 3
SD-14
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM421255, CM421655
SCR/Diode POW-R-BLOK™ Modules
55 Amperes/1200-1600 Volts
Absolute Maximum Ratings
Characteristics
Symbol
CM421255
CM421655
Units
Peak Forward Blocking Voltage
VDRM
1200
1600
Volts
Transient Peak Forward Blocking Voltage (Non-Repetitive), t < 5ms
VDSM
1350
1700
Volts
DC Forward Blocking Voltage
VD(DC)
960
1280
Volts
Peak Reverse Blocking Voltage
VRRM
1200
1600
Volts
Transient Peak Reverse Blocking Voltage (Non-Repetitive), t < 5ms
VRSM
1350
1700
Volts
DC Reverse Blocking Voltage
VR(DC)
960
1280
Volts
RMS On-State Current
IT(RMS), IF(RMS)
86
86
Amperes
Average On-State Current, TC = 81°C
IT(AV), IF(AV)
55
55
Amperes
Peak One-Cycle Surge (Non-Repetitive) On-State Current (60Hz)
ITSM, IFSM
1100
1100
Amperes
Peak One-Cycle Surge (Non-Repetitive) On-State Current (50Hz)
ITSM, IFSM
1000
1000
Amperes
I2t (for Fusing), 8.3 milliseconds
I2t
5000
5000
A2sec
Critical Rate-of-Rise of On-State Current*
di/dt
100
100
Amperes/
s
Peak Gate Power Dissipation
PGM
5.0
5.0
Watts
Average Gate Power Dissipation
PG(AV)
0.5
0.5
Watts
Peak Forward Gate Voltage
VGFM
10
10
Volts
Peak Reverse Gate Voltage
VGRM
5.0
5.0
Volts
Peak Forward Gate Current
IGFM
2.0
2.0
Amperes
Storage Temperature
TSTG
-40 to 125
-40 to 125
°C
Operating Temperature
Tj
-40 to 125
-40 to 125
°C
Maximum Mounting Torque M6 Mounting Screw
—
26
26
in.-lb.
Maximum Mounting Torque M5 Terminal Screw
—
17
17
in.-lb.
Module Weight (Typical)
—
160
160
Grams
V Isolation
VRMS
2500
2500
Volts
*Tj = 125°C, IG = 0.5A, VD = 1/2 VDRM
Electrical and Thermal Characteristics,
Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
CM421255/CM421655
Units
Blocking State Maximums
Forward Leakage Current, Peak
IDRM
Tj = 125°C, VDRM = Rated
10
mA
Reverse Leakage Current, Peak
IRRM
Tj = 125°C, VRRM = Rated
10
mA
Conducting State Maximums
Peak On-State Voltage
VFM, VTM
IFM = 165A, ITM = 165A
1.5
Volts
Switching Minimums
Critical Rate-of-Rise of Off-State Voltage
dv/dt
Tj = 125°C, VD = 2/3 VDRM
500
Volts/
s
Thermal Maximums
Thermal Resistance, Junction-to-Case
R
(J-C)
Per Module
0.8
°C/Watt
Thermal Resistance, Case-to-Sink (Lubricated)
R
(C-S)
Per Module
0.2
°C/Watt
Gate Parameters Maximums
Gate Current-to-Trigger
IGT
VD = 6V, RL = 2
Ω
100
mA
Gate Voltage-to-Trigger
VGT
VD = 6V, RL = 2
Ω
2.0
Volts
Non-Triggering Gate Voltage
VGDM
Tj = 125°C, VD = 1/2 VDRM
0.25
Volts