C&H Technology CM150DX-24A - Manual (Page 3)

CM150DX-24A
Dual IGBTMOD™ NX-Series Module
150 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
2 Rev. 3/09
Absolute Maximum Ratings, T
j
= 25°C unless otherwise specified
Characteristics Symbol CM150DX-24A Units
Power Device Junction Temperature T
j
-40 to 150 °C
Storage Temperature T
stg
-40 to 125 °C
Mounting Torque, M5 Mounting Screws — 31 in-lb
Mounting Torque, M6 Main Terminal Screws — 40 in-lb
Module Weight (Typical) — 330 Grams
Baseplate Flatness, On Centerline X, Y (See Below) — ±0 ~ +100 µm
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal V
ISO
2500 Volts
Inverter Sector
Collector-Emitter Voltage (G-E Short) V
CES
1200 Volts
Gate-Emitter Voltage (C-E Short) V
GES
±20 Volts
Collector Current (T
C
= 91°C) *1 I
C
150 Amperes
Peak Collector Current (Pulse) *3 I
CM
300 Amperes
Emitter Current (T
C
= 25°C) *1*4 I
E
*2 150 Amperes
Peak Emitter Current (Pulse) *3 I
EM
*2 300 Amperes
Maximum Collector Dissipation (T
C
= 25°C) *1*4 P
C
960 Watts
*1 Case temperature (T
C
) and heatsink temperature (T
f
) are defined on the surface of the baseplate and heatsink at just under the chip.
*2 I
E
, I
EM
, V
EC
, t
rr
and Q
rr
represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*3 Pulse width and repetition rate should be such that device junction temperature (T
j
) does not exceed T
j(max)
rating.
*4 Junction temperature (T
j
) should not increase beyond T
j(max)
rating.
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
23
24
48
47
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
0
0
0
Dimensions in mm (Tolerance: ±1mm)
IGBT FWDi NTC Thermistor
Chip Location (Top View)
0
21.2
32.6
31
.3
73.5
21.2
42.5 73.5
43.8
34.2
36.2 Th
CHIP LOCATION (TOP VIEW) BASEPLATE FLATNESS
MEASUREMENT POINT
HEATSINK SIDE
– :
CONC
A
VE
+ :
CONVEX
– : CONCAVE
X
Y
+ : CONVEX
HEA
TSINK SIDE