C&H Technology CM100DU-12F - Manual (Page 3)

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CM100DU-12F
Trench Gate Design Dual IGBTMOD™
100 Amperes/600 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings Symbol CM100DU-12F Units
Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC 100 Amperes
Peak Collector Current ICM 200* Amperes
Emitter Current** (Tc = 25°C) IE 100 Amperes
Peak Emitter Current** IEM 200* Amperes
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 350 Watts
Mounting Torque, M5 Main Terminal – 31 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Volts
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 20 μA
Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V 5 6 7 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V, Tj = 25°C – 1.6 2.2 Volts
IC = 100A, VGE = 15V, Tj = 125°C – 1.6 – Volts
Total Gate Charge QG VCC = 300V, IC = 100A, VGE = 15V – 620 – nC
Emitter-Collector Voltage** VEC IE = 100A, VGE = 0V – – 2.6 Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
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