C&H Technology CM200DU-12NFH - Manual (Page 3)

CM200DU-12NFH
Dual IGBTMOD™ NFH-Series Module
200 Amperes/600 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
2 Rev. 11/09
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM200DU-12NF Units
Junction Temperature Tj –40 to 150 °C
Storage Temperature Tstg –40 to 125 °C
Collector-Emitter Voltage (G-E Short) VCES 600 Volts
Gate-Emitter Voltage (C-E Short) VGES ±20 Volts
Collector Current (TC = 25°C) IC 200* Amperes
Peak Collector Current ICM 400* Amperes
Emitter Current** (TC = 25°C) IE 200* Amperes
Peak Emitter Current** IEM 400* Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 590 Watts
Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C) PC 830 Watts
Mounting Torque, M5 Main Terminal — 30 in-lb
Mounting Torque, M6 Mounting — 40 in-lb
Weight — 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) VISO 2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 5.0 6.0 7.0 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25°C — 2.0 2.7 Volts
IC = 200A, VGE = 15V, Tj = 125°C — 1.95 — Volts
Total Gate Charge QG VCC = 300V, IC = 200A, VGE = 15V — 1240 — nC
Emitter-Collector Voltage** VEC IE = 100A, VGE = 0V — — 2.6 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies — — 55 nf
Output Capacitance Coes VCE = 10V, VGE = 0V — — 3.6 nf
Reverse Transfer Capacitance Cres — — 2.0 nf
Inductive Turn-on Delay Time td(on) — — 250 ns
Load Rise Time tr VCC = 300V, IC = 200A, — — 150 ns
Switch Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 6.3Ω, — — 500 ns
Time Fall Time tf Inductive Load Switching Operation, — — 150 ns
Diode Reverse Recovery Time** trr IE = 200A — — 150 ns
Diode Reverse Recovery Charge** Qrr — 3.5 — µC
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).