C&H Technology CM520813 User Manual

Page 3

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SD-26

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

CM520813
SCR/Diode POW-R-BLOK™ Modules

130 Amperes/800 Volts

Absolute Maximum Ratings

Characteristics

Symbol

CM520813

Units

Peak Forward Blocking Voltage

VDRM

800

Volts

Transient Peak Forward Blocking Voltage (Non-Repetitive), t < 5ms

VDSM

960

Volts

DC Forward Blocking Voltage

VD(DC)

640

Volts

Peak Reverse Blocking Voltage

VRRM

800

Volts

Transient Peak Reverse Blocking Voltage (Non-Repetitive), t < 5ms

VRSM

960

Volts

DC Reverse Blocking Voltage

VR(DC)

640

Volts

RMS On-State Current

IT(RMS), IF(RMS)

205

Amperes

Average On-State Current, TC = 85°C

IT(AV), IF(AV)

130

Amperes

Peak One-Cycle Surge (Non-Repetitive) On-State Current (60Hz)

ITSM, IFSM

2600

Amperes

Peak One-Cycle Surge (Non-Repetitive) On-State Current (50Hz)

ITSM, IFSM

2365

Amperes

I2t (for Fusing), 8.3 milliseconds

I2t

28000

A2sec

Critical Rate-of-Rise of On-State Current*

di/dt

100

Amperes/

s

Peak Gate Power Dissipation

PGM

10.0

Watts

Average Gate Power Dissipation

PG(AV)

3.0

Watts

Peak Forward Gate Voltage

VGFM

10

Volts

Peak Reverse Gate Voltage

VGRM

5.0

Volts

Peak Forward Gate Current

IGFM

4.0

Amperes

Storage Temperature

TSTG

-40 to 125

°C

Operating Temperature

Tj

-40 to 125

°C

Maximum Mounting Torque M6 Mounting Screw

26

in.-lb.

Maximum Mounting Torque M5 Terminal Screw

72

in.-lb.

Module Weight (Typical)

300

Grams

V Isolation

VRMS

2000

Volts

*Tj = 125°C, IG = 0.5A, VD = 1/2 VDRM

Electrical and Thermal Characteristics,

Tj = 25°C unless otherwise specified

Characteristics

Symbol

Test Conditions

CM520813

Units

Blocking State Maximums

Forward Leakage Current, Peak

IDRM

Tj = 125°C, VDRM = Rated

30

mA

Reverse Leakage Current, Peak

IRRM

Tj = 125°C, VRRM = Rated

30

mA

Conducting State Maximums

Peak On-State Voltage

VFM, VTM

IFM = 390A, ITM = 390A

1.3

Volts

Switching Minimums

Critical Rate-of-Rise of Off-State Voltage

dv/dt

Tj = 125°C, VD = 2/3 VDRM

500

Volts/

s

Thermal Maximums

Thermal Resistance, Junction-to-Case

R

(J-C)

Per Module

0.22

°C/Watt

Thermal Resistance, Case-to-Sink (Lubricated)

R

(C-S)

Per Module

0.05

°C/Watt

Gate Parameters Maximums

Gate Current-to-Trigger

IGT

VD = 6V, RL = 2

100

mA

Gate Voltage-to-Trigger

VGT

VD = 6V, RL = 2

3.0

Volts

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