C&H Technology CM50DU-24F User Manual
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CM50DU-24F
Trench Gate Design Dual IGBTMOD™
50 Amperes/1200 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE,
V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0
200
16
12
8
4
0
400
800
V
CC
= 600V
600
V
CC
= 400V
I
C
= 50A
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME,
t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
2
10
0
10
1
10
2
10
1
10
0
t
rr
I
rr
10
2
10
1
10
0
REVERSE RECOVERY CURRENT,
I
rr
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
0
10
1
10
2
10
2
10
1
10
0
t
d(off)
t
d(on)
t
r
V
CC
= 600V
V
GE
=
±15V
R
G
= 6.3
Ω
T
j
= 125
°C
Inductive Load
t
f
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE,
C
ie
s
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
V
GE
= 0V
10
1
C
ies
C
oes
0
1.0
2.0
3.0
4.0
10
0
10
1
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
2
EMITTER CURRENT,
I
E
, (AMPERES
)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE,
V
CE(sat
), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
6
8
12
10
18
16
14
20
4
3
2
1
0
T
j
= 25
°C
I
C
= 20A
I
C
= 100A
I
C
= 50A
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE,
V
CE(sat)
, (VOLTS
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3
0
20
40
60
80
2
1
0
100
V
GE
= 15V
T
j
= 25
°C
T
j
= 125
°C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT,
I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
1
2
3
4
0
T
j
= 25
o
C
20
40
60
80
100
V
GE
= 20V
15
10 9.5
9
8.5
8
11
V
CC
= 600V
V
GE
=
±15V
R
G
= 6.3
Ω
T
j
= 25
°C
Inductive Load
C
res
T
j
= 25
°C
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE,
Z
th
(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
-2
10
-3
Z
th
=
R
th
• (NORMALIZED VALUE)
Per Unit Base
R
th(j-c)
= 0.39
°C/W (IGBT)
R
th(j-c)
= 0.7
°C/W (FWDi)
Single Pulse
T
C
= 25
°C