Electrical characteristics @ t, 25°c (unless otherwise specified), Switching characteristics @ t – C&H Technology 20MT120UF User Manual

Page 3: Parameters min typ max units test conditions

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20MT120UF

I27124 rev. D 02/03

V

(BR)CES

Collector-to-Emitter Breakdown Voltage 1200

V

V

GE

= 0V, I

C

= 250µA

∆V

(BR)CES

/ Temperature Coeff. of

+1.3

V/°C

V

GE

= 0V, I

C

= 3mA (25-125°C)

∆T

J

Breakdown Voltage

V

CE(ON)

Collector-to-Emitter Saturation Voltage

3.29

3.59

V

V

GE

= 15V, I

C

= 20A

4.42

4.66

V

GE

= 15V, I

C

= 40A

3.87

4.11

V

GE

= 15V, I

C

= 20A T

J

= 125°C

5.32

5.70

V

GE

= 15V, I

C

= 40A T

J

= 125°C

3.99

4.27

V

GE

= 15V, I

C

= 20A T

J

= 150°C

V

GE(th)

Gate Threshold Voltage

4

6

V

V

CE

= V

GE

, I

C

= 250µA

∆V

GE(th)

/ Temperature Coeff. of

-14

mV/°C V

CE

= V

GE

, I

C

= 3mA (25-125°C)

∆T

J

Threshold Voltage

g

fe

Transconductance

17.5

S

V

CE

= 50V, I

C

= 20A, PW = 80µs

I

CES

Zero Gate Voltage Collector Current

(1)

250

µA

V

GE

= 0V, V

CE

= 1200V, T

J

= 25°C

0.7

3.0

mA

V

GE

= 0V, V

CE

= 1200V, T

J

= 125°C

2.9

9.0

V

GE

= 0V, V

CE

= 1200V, T

J

= 150°C

I

GES

Gate-to-Emitter Leakage Current

±250

nA

V

GE

= ± 20V

Electrical Characteristics @ T

J

= 25°C (unless otherwise specified)

Parameters

Min Typ Max Units Test Conditions

Q

g

Total Gate Charge (turn-on)

176

264

nC

I

C

= 20A

Q

ge

Gate-Emitter Charge (turn-on)

19

30

V

CC

= 600V

Q

gc

Gate-Collector Charge (turn-on)

89

134

V

GE

= 15V

E

on

Turn-On Switching Loss

513

770

µJ

V

CC

= 600V, I

C

= 20A

E

off

Turn-Off Switching Loss

402

603

V

GE

= 15V, R

g

= 5

Ω, L = 200µH

E

tot

Total Switching Loss

915

1373

T

J

= 25°C, Energy losses include tail

and diode reverse recovery

E

on

Turn-On Switching Loss

930

1395

µJ

V

CC

= 600V, I

C

= 20A

E

off

Turn-Off Switching Loss

610

915

V

GE

= 15V, R

g

= 5

Ω, L = 200µH

E

tot

Total Switching Loss

1540

2310

T

J

= 125°C, Energy losses include tail

and diode reverse recovery

C

ies

Input Capacitance

2530

3790

pF

V

GE

= 0V

C

oes

Output Capacitance

344

516

V

CC

= 30V

C

res

Reverse Transfer Capacitance

78

117

f = 1.0 MHz

RBSOA

Reverse Bias Safe Operating Area

full square

T

J

= 150°C, I

C

= 120A

V

CC

= 1000V, V

p

= 1200V

R

g

= 5

Ω, V

GE

= +15V to 0V

SCSOA

Short Circuit Safe Operating Area

10

µs

T

J

= 150°C

V

CC

= 900V, V

p

= 1200V

R

g

= 5

Ω, V

GE

= +15V to 0V

Switching Characteristics @ T

J

= 25°C (unless otherwise specified)

Parameters

Min Typ Max Units Test Conditions

(1)

I

CES

includes also opposite leg overall leakage

Document Number: 93588

www.vishay.com

2

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