C&H Technology CM400HB-90H User Manual
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CM400HB-90H
Single IGBTMOD™ HVIGBT
400 Amperes/4500 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dynamic Electrical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
–
72
–
nF
Output Capacitance
C
oes
V
GE
= 0V, V
CE
= 10V
–
5.3
–
nF
Reverse Transfer Capacitance
C
res
–
1.6
–
nF
Resistive
Turn-on Delay Time
t
d(on)
V
CC
= 2250V, I
C
= 400A, –
–
2.4
µ
s
Load
Rise Time
t
r
V
GE1
= V
GE2
= 15V, –
–
2.4
µ
s
Switching
Turn-off Delay Time
t
d(off)
R
G
= 22.5
Ω
–
–
6.0
µ
s
Times
Fall Time
t
f
Resistive Load Switching Operation –
–
1.2
µ
s
Diode Reverse Recovery Time**
t
rr
I
E
= 400A, di
E
/dt = -800A/
µ
s
–
–
1.8
µ
s
Diode Reverse Recovery Charge**
Q
rr
I
E
= 400A, di
E
/dt = -800A/
µ
s
–
160*
–
µ
C
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Thermal and Mechanical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Q
Per IGBT
–
–
0.023
K/W
Thermal Resistance, Junction to Case
R
th(j-c)
D
Per FWDi
–
–
0.045
K/W
Contact Thermal Resistance, Case to Fin
R
th(c-f)
Per Module, Thermal Grease Applied
–
0.015
–
K/W