C&H Technology CM400HG-66H - Manual (Page 8)

Jul. 2005
MITSUBISHI HVIGBT MODULES
CM400HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
EMITTER-COLLECTOR VOLTAGE (V)
REVERSE RECOVERY CURRENT
( A
)
FREE-WHEEL DIODE REVERSE
RECOVERY SAFE OPERATING AREA
(RRSOA)
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR CURRENT
( A
)
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
1200
1000
800
600
400
0
1000 2000 0 3000 4000
200
1200
1000
800
600
400
0
1000 2000 0 3000 4000
200
V CC
≤
2200V, di/dt
≤
2200A/
µ
s
T j = 125 ° C
V CC
≤
2200V, V GE = +/-15V
T j = 125 ° C, R G(off)
≥ 5 Ω