C&H Technology CM400HA-24A - Manual (Page 3)

CM400HA-24A
Single IGBTMOD™ A-Series Module
400 Amperes/1200 Volts
2 01/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings Symbol CM400HA-24A Units
Junction Temperature Tj –40 to 150 °C
Storage Temperature Tstg –40 to 125 °C
Collector-Emitter Voltage (G-E Short) VCES 1200 Volts
Gate-Emitter Voltage (C-E Short) VGES ±20 Volts
Collector Current (DC, TC = 87°C)* 4 IC 400 Amperes
Peak Collector Current (Pulse, Repetitive)* 2 ICM 800 Amperes
Maximum Collector Dissipation (TC = 25°C)* 2, * 4 PC 2350 Watts
Emitter Current (TC = 25°C) IE* 1 400 Amperes
Peak Emitter Current (Pulse, Repetitive)* 2 IEM* 1 800 Amperes
Mounting Torque, M6 Main Terminal — 26 in-lb
Mounting Torque, M6 Mounting — 26 in-lb
Mounting Torque, M4 G(E) Terminal — 13 in-lb
Weight — 480 Grams
Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.) VISO 2500 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA
Gate Leakage Current IGES ±VGE = VGES, VCE = 0V — — 1.0 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 40mA, VCE = 10V 6.0 7.0 8.0 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 400A, VGE = 15V, Tj = 25°C* 3 — 2.1 3.0 Volts
IC = 400A, VGE = 15V, Tj = 125°C* 3 — 2.4 — Volts
Forward Transfer Admittance |γfs| IC = 400A, VCE = 10V* 3 120 — — sec
Input Capacitance Cies — — 70 nf
Output Capacitance Coes VCE = 10V, VGE = 0V — — 6 nf
Reverse Transfer Capacitance Cres — — 1.4 nf
Total Gate Charge QG VCC = 600V, IC = 400A, VGE = 15V — 2000 — nC
Inductive Turn-on Delay Time td(on) — — 550 ns
Load Rise Time tr VCC = 600V, IC = 400A, — — 180 ns
Switch Turn-off Delay Time td(off) VGE = ±15V, RG = 0.78Ω, — — 600 ns
Time Fall Time tf Inductive Load — — 350 ns
Diode Reverse Recovery Time trr* 1 IE = 400A — — 250 ns
Diode Reverse Recovery Charge Qrr* 1 — 14.7 — µC
Emitter-Collector Voltage VEC* 1 IE = 400A, VGE = 0V* 3 — — 3.8 Volts
External Gate Resistance RG 0.78 — 10 Ω
*1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
*3 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.