C&H Technology 8TT100 - Manual (Page 2)

Document Number: 94536 For technical questions, contact: [email protected] www.vishay.com
Revision: 05-Sep-08 1
High Performance
Schottky Generation 5.0, 8 A
8TT100
Vishay High Power Products
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized V
F
vs. I
R
trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Full lead (Pb)-free and RoHS compliant devices
• Designed and qualified for industrial level
APPLICATIONS
• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems
PRODUCT SUMMARY
I
F(AV)
8 A
V
R
100 V
V
F
at 8 A at 125 °C 0.58 V
Anode
1
2
3
Cathode TO-220AC
Base
cathode
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
V
RRM
100
V
V
F
8 Apk, T
J
= 125 °C (typical) 0.55
T
J
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL TEST CONDITIONS 8TT100 UNITS
Maximum DC reverse voltage V
R
T
J
= 25 °C 100 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward
current
I
F(AV)
50 % duty cycle at T
C
= 163 °C, rectangular waveform 8
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
5 µs sine or 3 µs rect. pulse Following any rated
load condition and with
rated V
RRM
applied
850
10 ms sine or 6 ms rect. pulse 210
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1.5 A, L = 60 mH 67 mJ
Repetitive avalanche current I
AR
Limited by frequency of operation and time pulse duration so
that T
J
< T
J
max. I
AS
at T
J
max. as a function of time pulse
See fig. 8
I
AS
at
T
J
max.
A