22ria series, Vishay high power products, Medium power thyristors (stud version), 22 a – C&H Technology 22RIA Series User Manual

Page 4: Switching, Blocking, Triggering

Advertising
background image

Document Number: 93700

For technical questions, contact: [email protected]

www.vishay.com

Revision: 19-Sep-08

3

22RIA Series

Medium Power Thyristors

(Stud Version), 22 A

Vishay High Power Products

Note
• t

q

= 10 µs up to 600 V, t

q

= 30 µs up to 1600 V available on special request

Note

(1)

Available with: dV/dt = 1000 V/µs, to complete code add S90 i.e. 22RIA120S90

SWITCHING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum rate of rise
of turned-on current

V

DRM

≤ 600 V

dI/dt

T

J

= T

J

maximum, V

DM

= Rated V

DRM

Gate pulse = 20 V, 15

Ω, t

p

= 6 µs, t

r

= 0.1 µs maximum

I

TM

= (2 x rated dI/dt) A

200

A/µs

V

DRM

≤ 800 V

180

V

DRM

≤ 1000 V

160

V

DRM

≤ 1600 V

150

Typical turn-on time

t

gt

T

J

= 25 °C,

at rated V

DRM

/V

RRM

, T

J

= 125 °C

0.9

µs

Typical reverse recovery time

t

rr

T

J

= T

J

maximum,

I

TM

= I

T(AV)

, t

p

> 200 µs, dI/dt = - 10 A/µs

4

Typical turn-off time

t

q

T

J

= T

J

maximum, I

TM

= I

T(AV)

, t

p

> 200 µs, V

R

= 100 V,

dI/dt = - 10 A/µs, dV/dt = 20 V/µs linear to 67 % V

DRM

,

gate bias 0 V to 100 W

110

BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum critical rate of rise
of off-state voltage

dV/dt

T

J

= T

J

maximum linear to 100 % rated V

DRM

100

V/µs

T

J

= T

J

maximum linear to 67 % rated V

DRM

300

(1)

TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum peak gate power

P

GM

T

J

= T

J

maximum

8.0

W

Maximum average gate power

P

G(AV)

2.0

Maximum peak positive gate current

I

GM

T

J

= T

J

maximum

1.5

A

Maximum peak negative gate voltage

-V

GM

T

J

= T

J

maximum

10

V

DC gate current required to trigger

I

GT

T

J

= - 65 °C

Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied

90

mA

T

J

= 25 °C

60

T

J

= 125 °C

35

DC gate voltage required to trigger

V

GT

T

J

= - 65 °C

3.0

V

T

J

= 25 °C

2.0

T

J

= 125 °C

1.0

DC gate current not to trigger

I

GD

T

J

= T

J

maximum, V

DRM

= Rated value

2.0

mA

DC gate voltage not to trigger

V

GD

T

J

= T

J

maximum,

V

DRM

= Rated value

Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V

DRM

anode to

cathode applied

0.2

V

Advertising