Electrical and mechanical characteristics, t, 25°c unless otherwise specified inverter sector, Thermal and mechanical characteristics, t – C&H Technology CM150RX-12A User Manual

Page 4: 25°c unless otherwise specified

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CM150RX-12A
Six IGBTMOD™ + Brake NX-Series Module
150 Amperes/600 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272

3

Rev. 11/08

Electrical and Mechanical Characteristics,

T

j

= 25°C unless otherwise specified

Inverter Sector

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Collector Cutoff Current

I

CES

V

CE

= V

CES

, V

GE

= 0V

1.0

mA

Gate-Emitter Threshold Voltage

V

GE(th)

I

C

= 15mA, V

CE

= 10V

5

6

7

Volts

Gate Leakage Current

I

GES

V

GE

= V

GES

, V

CE

= 0V

0.5

µA

Collector-Emitter Saturation Voltage

V

CE(sat)

I

C

= 150A, V

GE

= 15V, T

j

= 25°C

1.7

2.1

Volts

I

C

= 150A, V

GE

= 15V, T

j

= 125°C

1.9

Volts

I

C

= 150A, V

GE

= 15V, Chip

1.6

Volts

Input Capacitance

C

ies

— — 18.0 nF

Output Capacitance

C

oes

V

CE

= 10V, V

GE

= 0V

2.0

nF

Reverse Transfer Capacitance

C

res

— — 0.6 nF

Total Gate Charge

Q

G

V

CC

= 300V, I

C

= 150A, V

GE

= 15V

400

nC

Inductive

Turn-on Delay Time

t

d(on)

— — 120 ns

Load

Turn-on Rise Time

t

r

V

CC

= 300V, I

C

= 150A,

100

ns

Switch

Turn-off Delay Time

t

d(off)

V

GE

= ±15V,

— — 350 ns

Time

Turn-off Fall Time

t

f

R

G

= 6.2Ω, I

E

= 150A,

600

ns

Reverse Recovery Time*

t

rr

Inductive Load Switching Operation

200

ns

Reverse Recovery Charge*

Qrr

5.0

µC

Emitter-Collector Voltage*

V

EC

I

E

= 150A, V

GE

= 0V, T

j

= 25°C

2.0

2.8

Volts

I

E

= 150A, V

GE

= 0V, T

j

= 125°C

1.95

Volts

I

E

= 150A, V

GE

= 0V, Chip

1.9

Volts

Thermal and Mechanical Characteristics,

T

j

= 25°C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Thermal Resistance, Junction to Case**

R

th(j-c)

Q

Per IGBT

0.24

°C/W

Thermal Resistance, Junction to Case**

R

th(j-c)

D

Per FWDi

0.46

°C/W

Contact Thermal Resistance**

R

th(c-f)

Thermal

Grease

Applied

— 0.015 — °C/W

Internal Gate Resistance

R

Gint

T

C

= 25°C

0

Ω

External Gate Resistance

R

G

4.1 — 41 Ω

*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**T

C

, T

f

measured point is just under the chips.

34

20.6

0

0

22.6

34.1

45.3

55.8

79.6

89.3

99.7

0

23.1

33.6

44.8

55.3

79.1

89.6

96.4

97

.8

0

17.3

26.8

41.4

26.0

29.4
35.4

33 32 31 30 29 28 27 26 25 24 23 22

Dimensions in mm (Tolerance: ±1mm)

21 20 19 18 17 16 15 14 13

12

35

36

1

2

3

4

11

10

9
8
7

6
5

IGBT FWDi NTC Thermistor

Chip Location (Top View)

U

P

V

P

W

P

W

N

V

N

U

N

U

P

V

P

W

P

W

N

Br
Th

Br

V

N

U

N

CHIP LOCATION (TOP VIEW)

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