C&H Technology CM50TU-34KA - Manual (Page 3)

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CM50TU-34KA
Six IGBTMOD™ KA-Series Module
50 Amperes/1700 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings Symbol CM50TU-34KA Units
Junction Temperature T j -40 to 150
°
C
Storage Temperature T stg -40 to 125
°
C
Collector-Emitter Voltage (G-E SHORT) V
CES
1700 Volts
Gate-Emitter Voltage (C-E SHORT) V
GES
±
20 Volts
Collector Current (T
c
= 25
°
C) I
C
50 Amperes
Peak Collector Current (T
j
≤
150
°
C) I
CM
100* Amperes
Emitter Current** (T c = 25
°
C) I E 50 Amperes
Peak Emitter Current** I
EM
100* Amperes
Maximum Collector Dissipation (T
c
= 25 ° C) P
c
600 Watts
Mounting Torque, M5 Main Terminal – 31 in-lb
Mounting Torque, M5 Mounting – 31 in-lb
Weight – 680 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 3500 Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V – – 1 mA
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V – – 0.5
µ
A
Gate-Emitter Threshold Voltage V GE(th) I C = 5mA, V CE = 10V 4.0 5.5 7.0 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 50A, V
GE
= 15V, T
j
= 25 ° C – 3.2 4.0 Volts
I
C
= 50A, V
GE
= 15V, T
j
= 125 ° C – 3.8 – Volts
Total Gate Charge Q
G
V
CC
= 1000V, I
C
= 50A, V
GE
= 15V – 225 – nC
Emitter-Collector Voltage* V
EC
I
E
= 50A, V
GE
= 0V, T
j
= 25
°
C – – 4.6 Volts
I
E
= 50A, V
GE
= 0V, T
j
= 125
°
C – 2.2 – Volts
* Pulse width and repetition rate should be such that the device junction temperature (T j ) does not exceed T j(max) rating.
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
ies
– – 7.0 nf
Output Capacitance C oes V CE = 10V, V GE = 0V – – 1.2 nf
Reverse Transfer Capacitance C
res
– – 0.38 nf
Resistive Turn-on Delay Time t
d(on)
V
CC
= 1000V, I
C
= 50A, – – 100 ns
Load Rise Time t
r
V
GE1
= V
GE2
= 15V, – – 100 ns
Switch Turn-off Delay Time t
d(off)
R
G
= 6.3 ⍀ , Resistive – – 400 ns
Times Fall Time t f Inductive Load – – 800 ns
Diode Reverse Recovery Time t rr Switching Operation – – 200 ns
Diode Reverse Recovery Charge Q
rr
I
E
= 50A – 3.9 – µ C
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