Vishay semiconductors, Phase control thyristors (stud version), 80 a, Ordering information table – C&H Technology 82RIA...PbF Series User Manual

Page 7

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Document Number: 94392

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Revision: 17-Sep-10

80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series

Vishay Semiconductors

Phase Control Thyristors

(Stud Version), 80 A

Fig. 8 - Thermal Impedance Z

thJC

Characteristics

Fig. 9 - Gate Characteristics

ORDERING INFORMATION TABLE

LINKS TO RELATED DOCUMENTS

Dimensions

www.vishay.com/doc?95362

0.001

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

Sq uare Wave Pulse Duration (s)

th

J

C

80RIA Series

Steady State Value

R = 0.30 K/W

(DC Operation)

Tr

an

si

e

n

t T

h

e

rm

a

l I

m

pe

da

n

c

e

Z

(K

/W

)

thJC

0.1

1

10

100

0.001

0.01

0.1

1

10

100

1000

VGD

IGD

(b)

(a)

Tj=25 °C

Tj=125 °C

Tj=-40 °C

(1)

(2)

(3)

Instantaneous Gate Current (A)

In

st

an

ta

ne

ou

s G

a

te

V

o

lt

ag

e

(

V

)

Rectangular gate pulse
a) Recommended load line for

b) Recommended load line for

Frequency Limited by PG(AV)

tr<=1 µs

rated di/dt : 20V, 30ohms; tr<=0.5 µs

<=30% rated di/dt : 20V, 65ohms

(1) PGM = 100W, tp = 500µs
(2) PGM = 50W, tp = 1ms
(3) PGM = 20W, tp = 2.5ms
(4) PGM = 10W, tp = 5ms

Device: 80RIA Series

(4)

1

-

I

TAV

x 10 A

3

-

RIA = Essential part number

4

6

-

Lead (Pb)-free

-

Voltage code x 100 = V

RRM

(see Voltage Ratings table)

5

-

None = Stud base 1/2"-20UNF- 2 A threads

M = Stud base metric threads M12 x 1.75 E 6

2

-

0 = Eyelet terminals (gate and auxiliary cathode leads)

1 = Fast-on terminals (gate and auxiliary cathode leads)

2 = Flag terminals (gate and auxiliary cathode terminals)

Device code

5

1

3

2

4

6

8

0

RIA

120

M

PbF

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